TEMT3700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • • • • • • • • • • • • 94 8553 DESCRIPTION TEMT3700 is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package for surface mounting on printed boards. The device is sensitive to visible and near infrared radiation. Package type: surface mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: ϕ = ± 60° Package notch indicates collector Package matched with IR emitter series VSML3710 Floor life: 1 year, MSL 2, acc. J-STD-020 Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • • • • • • Photo interrupters Miniature switches Counters Encoders Position sensors Ligth sensors PRODUCT SUMMARY COMPONENT Ica (mA) ϕ (deg) λ0.1 (nm) 0.5 ± 60 450 to 1080 TEMT3700 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMT3700-GS08 TEMT3700-GS18 Tape and reel Tape and reel MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 PLCC-2 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient tp/T ≤ 0.1, tp ≤ 10 µs Acc. reflow solder profile fig. 10 Soldered on PCB with pad dimensions: 4 mm x 4 mm SYMBOL VALUE UNIT VCEO VECO IC ICM PV Tj Tamb Tstg Tsd RthJA 70 5 50 100 100 100 - 40 to + 100 - 40 to + 100 260 400 V V mA mA mW °C °C °C °C K/W Note Tamb = 25 °C, unless otherwise specified Document Number: 81555 Rev. 1.7, 10-Oct-08 For technical questions, contact: [email protected] www.vishay.com 1 TEMT3700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant PV - Power Dissipation Limit (mW) 125 R thJA = 400 K/W 100 75 50 25 0 10 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 20376 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 70 TYP. MAX. UNIT VCE = 20 V, E = 0 ICEO 1 200 nA Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 3 pF Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V Collector ligth current Ica 0.5 mA Collector emitter breakdown voltage Collector emitter dark current V 0.25 Angle of half sensitivity ϕ ± 60 deg Wavelength of peak sensitivity λp 850 nm λ0.1 450 to 1080 nm λ0.5 620 to 980 nm Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VCEsat 0.15 VS = 5 V, IC = 1 mA, λ = 950 nm, RL = 1 kΩ tr/tf 6 µs VS = 5 V, IC = 1 mA, λ = 950 nm, RL = 100 Ω tr/tf 2 µs VS = 5 V, IC = 2 mA, RL = 100 Ω fc 180 kHz Range of spectral bandwidth Collector emitter saturation voltage Rise time, fall time Cut-off frequency 0.3 V Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 2.0 Ica rel - Relative Collector Current ICEO - Collector Dark Current (nA) 104 103 VCE = 20 V 102 101 10 20 94 8304 40 60 80 100 1.8 1.4 1.2 1.0 0.8 0.6 Tamb - Ambient Temperature (°C) 94 8239 Fig. 2 - Collector Dark Current vs. Ambient Temperature www.vishay.com 2 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 3 - Relative Collector Current vs. Ambient Temperature For technical questions, contact: [email protected] Document Number: 81555 Rev. 1.7, 10-Oct-08 TEMT3700 Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 8 ton/toff - Turn-on/Turn-off Time (µs) Ica - Collector Light Current (mA) 10 1 0.1 V CE = 5 V λ = 950 nm 0.01 0.001 0.01 0.1 1 E e - Irradiance (mW/cm²) 94 8316 4 toff 2 ton 0 10 VCE = 5 V RL = 100 Ω λ = 950 nm 6 0 2 Fig. 4 - Collector Light Current vs. Irradiance 4 6 8 10 12 14 IC - Collector Current (mA) 94 8293 Fig. 7 - Turn-on/Turn-off Time vs. Collector Current S (λ)rel - Relative Spectral Sensitivity λ = 950 nm 1 Ee = 1 mW/cm² 0.5 mW/cm² 0.2 mW/cm² 0.1 0.1 94 8317 1 10 0.8 0.6 0.4 0.2 0 100 VCE - Collector Emitter Voltage (V) 400 600 800 1000 λ - Wavelength (nm) 94 8348 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage Fig. 8 - Relative Spectral Sensitivity vs. Wavelength 0° 10 10° 20° 30° f = 1 MHz 8 Srel - Relative Sensitivity CCEO - Collector Emitter Capacitance (pF) 1.0 6 4 2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement I ca - Collector Light Current (mA) 10 80° 0 0.1 94 8294 1 10 VCE - Collector Emitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage Document Number: 81555 Rev. 1.7, 10-Oct-08 0.6 100 0.4 0.2 0 94 8318 Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement For technical questions, contact: [email protected] www.vishay.com 3 TEMT3700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant PACKAGE DIMENSIONS in millimeters Mounting Pad Layout 1.2 4 2.6 (2.8) area covered with solder resist 4 1.6 (1.9) 20350 SOLDER PROFILE DRYPACK 948625 300 max. 240 °C 10 s ca. 230 °C Temperature (°C) 250 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE 200 215 °C Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 1 year Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2, acc. to J-STD-020. 150 max 40 s max. 160 °C 100 90 s to 120 s Lead Temperature 50 Full Line: Typical Dotted: Process Limits 2 K/s to 4 K/s DRYING 0 0 50 100 150 200 Time (s) Fig. 10 - Lead Tin (SnPb) Reflow Solder Profile www.vishay.com 4 250 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. For technical questions, contact: [email protected] Document Number: 81555 Rev. 1.7, 10-Oct-08 TEMT3700 Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. 4.5 3.5 2.5 1.5 Adhesive tape Identification Label: Vishay type group tape code production code quantity Blister tape Component cavity 10.0 9.0 120° 94 8670 13.00 12.75 63.5 60.5 14.4 max. 180 178 94 8665 Fig. 14 - Dimensions of Reel-GS08 Fig. 11 - Blister Tape 2.2 2.0 3.5 3.1 4.5 3.5 5.75 5.25 3.6 3.4 4.0 3.6 4.1 3.9 4.1 3.9 2.5 1.5 8.3 7.7 Identification Label: Vishay type group tape code production code quantity 1.85 1.65 1.6 1.4 10.4 8.4 120° 0.25 2.05 1.95 94 8668 Fig. 12 - Tape Dimensions in mm for PLCC-2 MISSING DEVICES 13.00 12.75 62.5 60.0 321 329 14.4 max. 18857 Fig. 15 - Dimensions of Reel-GS18 A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction COVER TAPE REMOVAL FORCE The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. 94 8158 > 160 mm Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Fig. 13 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. Document Number: 81555 Rev. 1.7, 10-Oct-08 For technical questions, contact: [email protected] www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1