VISHAY TDSL51.0

TDSL51.0
Vishay Semiconductors
Low Current 13 mm Seven Segment Display
Color
High efficiency red
Type
TDSL5150
TDSL5160
Circuitry
Common anode
Common cathode
Description
The TDSL51.0 series are 13 mm character seven
segment low current LED displays in a very compact
package.
The displays are designed for a viewing distance up to
7 meters and available in high efficiency red. The grey
package surface and the evenly lighted untinted
segments provide an optimum on-off contrast.
All displays are categorized in luminous intensity
groups. That allows users to assemble displays with
uniform appearence.
Typical applications include instruments, panel
meters, point-of-sale terminals and household
equipment.
96 11508
Features
D
D
D
D
D
D
D
Low power consumption
Suitable for DC and multiplex operation
Evenly lighted segments
Grey package surface
Untinted segments
Luminous intensity categorized
Wide viewing angle
Applications
Panel meters
Test- and measure- equipment
Point-of-sale terminals
Control units
Document Number 83123
Rev. A2, 05-Oct-00
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1 (6)
TDSL51.0
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
TDSL5150 /TDSL5160
Parameter
Reverse voltage per segment
DC forward current per segment
Peak forward current per segment
Surge forward current per segment
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Test Conditions
tp ≤ 10 ms (non repetitive)
Tamb ≤ 45°C
t ≤ 3 sec, 2mm below
seating plane
Thermal resistance LED junction/ambient
Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
Value
6
15
45
100
320
100
–40 to + 85
–40 to + 85
260
Unit
V
mA
mA
mA
mW
°C
°C
°C
°C
RthJA
180
K/W
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
High efficiency red (TDSL5150 , TDSL5160 )
Parameter
Luminous intensity
y per segment
g
(digit average) 1)
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
g per segment
g
Reverse voltage per segment
Junction capacitance
1) I
Vmin and IV groups are mean
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2 (6)
Test Conditions
IF = 2 mA
IF = 5 mA
IF = 20 mA, tp/T =0.25
IF = 2 mA
IF = 2 mA
IF = 2 mA
IF = 2 mA
IF = 20 mA
IR = 10 mA
VR = 0, f = 1 MHz
values of segments a to g
Type
Symbol
IV
IV
IV
ld
lp
ϕ
VF
VF
VR
Cj
Min
280
Typ
400
1600
2000
612
6
Max
625
635
±50
1.8
2.7
20
30
2.4
3
Unit
mcd
mcd
mcd
nm
nm
deg
V
V
V
pF
Document Number 83123
Rev. A2, 05-Oct-00
TDSL51.0
Vishay Semiconductors
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
100
IF – Forward Current ( mA )
PV – Power Dissipation ( mW )
500
400
300
200
100
0
10
1
20
40
60
100
80
Tamb – Ambient Temperature ( °C )
95 11483
0
1
2
3
5
4
VF – Forward Voltage ( V )
95 10050
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
2.0
Iv rel – Relative Luminous Intensity
30
25
20
15
10
5
High Efficiency Red
1.6
1.2
0.8
0.4
IF=2mA
0
0
0
20
40
60
100
80
Tamb – Ambient Temperature ( °C )
95 11484
0
10
°
20
°
40°
0.9
50°
0.8
60°
70°
0.7
80°
60
80
100
Tamb – Ambient Temperature ( °C )
2.4
30°
1.0
40
Figure 5. Rel. Luminous Intensity vs.
Ambient Temperature
Iv rel – Relative Luminous Intensity
0°
20
95 10051
Figure 2. Forward Current vs. Ambient Temperature
Iv rel – Relative Luminous Intensity
tp/T=0.001
tp=10ms
0.1
0
IF – Forward Current ( mA )
High Efficiency Red
High Efficiency Red
2.0
1.6
1.2
0.8
0.4
0
0.6
0.4
0.2
0
0.2
0.4
0.6
95 10082
95 10321
Figure 3. Rel. Luminous Intensity vs.
Angular Displacement
Document Number 83123
Rev. A2, 05-Oct-00
10
20
50
1
0.5
0.2
100
0.1
200
500
IF(mA)
0.05
0.02
tp/T
Figure 6. Rel. Lumin. Intensity vs.
Forw. Current/Duty Cycle
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3 (6)
TDSL51.0
Vishay Semiconductors
1.2
Iv rel – Relative Luminous Intensity
Iv rel – Relative Luminous Intensity
100
High Efficiency Red
10
1
0.1
High Efficiency Red
1.0
0.8
0.6
0.4
0.2
0.01
0.1
95 10061
1
10
0
590
100
IF – Forward Current ( mA )
Figure 7. Relative Luminous Intensity vs. Forward Current
95 10040
610
630
650
670
690
l – Wavelength ( nm )
Figure 8. Relative Luminous Intensity vs. Wavelength
Dimensions in mm
95 11344
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4 (6)
Document Number 83123
Rev. A2, 05-Oct-00
TDSL51.0
Vishay Semiconductors
Pin connections
10
9
8
7
6
a
f
b
g
e
c
DP
d
1
2
3
Document Number 83123
Rev. A2, 05-Oct-00
4
5
1
2
3
4
5
6
7
8
9
10
e
d
A (K)
c
DP
b
a
A (K)
f
g
95 10896
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5 (6)
TDSL51.0
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.com
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Document Number 83123
Rev. A2, 05-Oct-00