Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Package Dimensions unit:mm 2153 0.15 2.9 5 4 0.6 6 0.2 [CPH6701] 2.8 0.05 2 3 0.95 0.7 0.9 1 0.2 0.6 · Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. · The CPH6701 is formed with two chips, one being equivalent to the CPH3106 and the other the SBS001, encapsulated in one package. · Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). 1.6 Features 0.4 Specifications 1 : Emitter 2 : Base 3 : Anode 4 : Common (Collector, Cathode) 5 : Common (Collector, Cathode) 6 : Common (Collector, Cathode) SANYO : CPH6 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO –15 V –12 V VEBO IC –5 V –3 A ICP –5 Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg –600 Mounted on a ceramic board (600mm2×0.8mm) A mA 1.3 W 150 ˚C –55 to +125 ˚C VRRM VRSM 11 V 15 V IO 500 mA [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current Junction Temperature IFSM Tj Storage Temperature Tstg 50Hz sine wave, 1 cycle 5 A –55 to +125 ˚C –55 to +125 ˚C Marking : PA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80300TS (KOTO) TA-2852/61899TS (KOTO) TA-1524 No.6007–1/5 CPH6701 Electrical Characteristics at Ta = 25˚C Parameter Symbol Ratings Conditions min typ max Unit [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=–12V, IE=0 VEB=–4V, IC=0 DC Current Gain hFE1 hFE2 VCE=–2V, IC=–0.5A VCE=–2V, IC=–3A fT VCE=–2V, IC=–0.5A 280 Cob VCB=–10V, f=1MHz 36 VCE(sat) VBE(sat) IC=–1.5A, IB=–30mA Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Emitter Breakdown Voltage IC=–1.5A, IB=–30mA V(BR)CBO IC=–10µA, IE=0 V(BR)CEO IC=–1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO Collector-to-Base Breakdown Voltage Turn-ON Time Storage Time Turn-OFF Time 200 –0.1 µA –0.1 µA 560 70 MHz pF –110 –165 mV –0.85 –1.2 V –15 V –12 V IC=–10µA, IC=0 –5 V ton tstg See specified Test Circuit. 30 ns See specified Test Circuit. 90 ns tf See specified Test Circuit. 10 ns [Di] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF IR=400µA IF=500mA IR C VR=6V trr Rthj-a Thermal Resistance 11 V 0.4 VR=10V, f=1MHz 0.45 V 200 µA 50 IF=IR=100mA, See specified Test Circuit. pF 10 Mounted on a ceramic board (600mm2×0.8mm) 96 ns ˚C/W Electrical Connection 6 5 4 1 2 3 A11501 Switching Time Test Circuit (TR) (Di) IB1 OUTPUT RB 220µF 50Ω + + 50Ω 10mA 10µs RL VR Duty≤10% 100mA IB2 INPUT 100Ω 470µF 10Ω 100mA PW=20µs D.C.≤1% trr VBE=5V VCC=–5V –20IB1=20IB2=IC=–1.5A –5V A11503 A11502 No.6007–2/5 CPH6701 I C - VCE A -2.0 6m –1 -180 –8mA -1.2 –6mA -1.0 –4mA -0.8 -0.6 –2mA -160 -80 –0.3mA -60 –0.2mA -20 IB=0 -0.6 -0.8 0 -1.0 –0.4mA -100 -40 -0.4 –0.5mA -120 -0.2 -0.2 –0.6mA -140 -0.4 –0.1mA IB=0 0 -1 Collector-to-Emitter Voltage, VCE – V -5 -2 -3 -4 I C - VBE [TR] VCE=–2V hFE - I C 1000 [TR] VCE=–2V 7 Ta=75°C DC Current Gain, hFE -4 5°C 25°C –25°C -3 Ta=7 -2 -5 Collector-to-Emitter Voltage, VCE – V 5 Collector Current, IC – A –0.7mA –10mA -1.4 0 [TR] –0.8mA –12mA –14mA -1.6 0 I C - VCE -200 Collector Current, IC – A Collector Current, IC – A -1.8 [TR] -1 3 25°C –25°C 2 100 7 5 3 2 0 0 0.2 0.4 0.6 0.8 10 -0.01 1.0 2 3 5 VCE(sat) - I C -1000 7 5 [TR] IC / IB=50 3 2 C °C 5° 25 =7 C 5° –2 Ta -100 7 5 3 2 -10 7 5 3 2 -1.0 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 3 2 -10 7 5 3 2 3 5 7 -0.1 2 3 5 7 -1.0 Collector Current, IC – A 2 3 5 7 -10 [TR] IC / IB=50 5 3 2 -1.0 –25°C 7 Ta=75°C 25°C 5 3 2 -0.1 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 2 3 5 7 -10 fT - IC 1000 3 5 7 -10 [TR] VCE =–2V 7 Gain-Bandwidth Product, f T – MHz Collector-to-Emitter Saturation Voltage, VCE(sat) – mV [TR] IC / IB=20 C 5°C 25° =7 a T C 5° –2 2 5 7 -1.0 7 7 -10 3 2 -1.0 -0.01 3 Collector Current, IC – A VCE(sat) - I C -100 7 5 2 VBE(sat) - I C -10 Collector Current, IC – A -1000 7 5 7 -0.1 Collector Current, IC – A Base-to-Emitter Saturation Voltage, VBE(sat) – V Collector-to-Emitter Saturation Voltage, VCE(sat) – mV Base-to-Emitter Voltage, VBE – V 5 3 2 100 7 5 3 2 10 7 57 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 Collector Current, IC – A No.6007–3/5 CPH6701 Cob - VCB 1000 7 5 100 7 5 3 2 10 7 5 3 2 1.0 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 2 3 ICP 10m IC 3 0m P C - Ta [TR] tio n 3 2 -0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board(600mm2×0.8mm) 2 3 5 7 2 -1.0 3 5 7 -10 2 I F - VF [SBD] 3 0.6 2 ×0 .8m 0.4 m) 0 0 20 40 60 80 100 120 140 7 5 3 2 0.01 7 5 3 2 160 0 0.1 0.2 Ambient Temperature, Ta – °C [SBD] Interterminal Capacitance, C – pF 100°C 3 2 75°C 0.1 7 5 50°C 3 2 0.01 7 5 25°C 3 2 0.001 70 2 4 6 8 10 0.4 0.5 12 14 C - VR 5 Ta=125°C 1.0 7 5 0.3 0.6 Forward Voltage, IF – V I R - VR 3 2 –25° C bo ard (60 0m m 0.1 25°C 0.8 ce ram ic C on a 75° 1.0 2 125 °C M ou nte d 1.2 Ta= 1.3 Forward Current, IF – A Collector Dissipation, PC – W op era 7 5 0.2 Reverse Current, IR – mA s Collector-to-Emitter Voltage, VCE – V 1.4 [SBD] f=1MHz 3 2 100 7 5 3 2 10 3 5 7 1.0 2 3 5 7 10 2 Reverse Voltage, VR – V Reverse Voltage, VR – V IS - t [SBD] Current waveform 50Hz sine wave 14 Surge Forward Current, IS (Peak) – A 0µ s DC -1.0 7 5 Collector-to-Base Voltage, VCB – V 1.6 50 s 10 2 3 2 5 [TR] s Collector Current, IC – A -10 7 5 1m 3 2 Output Capacitance, Cob – pF A S O [TR] f=1MHz 12 1s 20ms t 10 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t – s No.6007–4/5 CPH6701 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2000. Specifications and information herein are subject to change without notice. PS No.6007–5/5