BETLUX BL

SILICON PHOTO DIODES
BL-L4802PD
Features:
5*3.8*6.5mm SILICON PHOTO DIODES
Choice of various viewing angles.
Diffused and Water clear lens are available.
Fast response time.
High photo sensitivity.
Small junction capacitance.
The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitter.
Applications:
High speed photo detector
Camera
Infrared remote controller for TVs VCR, audio equipment, air conditioner, etc.
Absolute Maximum Ratings at Ta=25
Parameter
Symbol
Power Dissipation
Reverse Voltage
Operation Temperature
Storage Temperature
Rating
Pd
VR
TOPR
TSTG
Lead Soldering Temperature
.
w
w
150
35
-40 to +80
-40 to +85
m
o
c
mW
V
℃
℃
.
x
u
l
t
e
b
TSOL
Max.260 5 for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
■Electronic Optical Characteristics at Ta=25 Items
Unit
Symbol
Min.
Typ.
Max.
Unit
Condition
λP
-
940
-
nm
H=5mW/cm2
λP=940nm
H=5mW/cm2
λP=940nm
VR=5V
H=0mW/cm2
VR=10V
H=0mW/cm2
IR=100uA
Wavelength of Peak
Sensitivity
Open Circuit Voltage
Short Circuit Current
VOC
ISC
50
0.35
75
-
V
uA
Reverse Light Current
IL
60
120
-
uA
Reverse Dark Current
ID
-
5
30
nA
VBR
35
170
-
V
2θ1/2
-
140
-
Deg
Tr/Tf
-
50/50
-
nS
w
Reverse Break down
Voltage
Viewing angle
Rise/Fall Time
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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RL=1000Ω
VR=10V
SILICON PHOTO DIODES
BL-L4802PD
Package configuration & Internal circuit diagram
m
o
c
.
x
.
w
w
u
l
t
e
b
w
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is 0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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SILICON PHOTO DIODES
BL-L4802PD
Typical electrical-optical characteristics curves:
(A)
1.0
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
500
450
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH( p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
8
64 5
2 3
40
e
b
.
w
w
30
20
10
0
1.2
1.6
2.0
2.4
1
3.0
2.6
2.0
1.0
20
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
1
5
4
2
3
60
80
0.2
-10
0
10
20
30
40
AMBIENT TEMPERATURE Ta( )
50
60
30
20
1
6
2,4,8,A
3
5
10
0
100
20
40
60
80
100
AMBIENT TEMPERATURE Ta( )
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
4
3
2
-20
40
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
0.5
0.1
-30
40
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
RELATIVE LUMINOUS INTENSITY
1
B
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
w
3
2
5
50
0
3.0
m
o
c
.
x
lt u
4.0
FORWARD CURRENT(mA)
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
1
50
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
4
3
2
70
1
1
10
100
1000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
NOTE:25
10,000
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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10,000