Central
TM
Semiconductor Corp.
2N5333
PNP SILICON POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5333 is
a PNP Silicon Power Transistor manufactured
by the epitaxial planar process, mounted in a
hermetically sealed metal case, designed for
amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
SYMBOL
VCBO
100
UNITS
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
6.0
V
IC
ICM
2.0
A
5.0
A
IB
1.0
A
PD
1.0
W
TJ, Tstg
-65 to +200
°C
ΘJA
175
°C/W
Continuous Collector Current
Peak Collector Current (tp < 0.3ms)
Continuous Base Current
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICES
VCE=90V
ICES
ICEO
IEBO
IEBO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
hfe
fT
ton
toff
VCE=50V (TC=150°C)
VCE=40V
VEB=4.0V
VEB=6.0V
IC=30mA
IC=1.0A, IB=100mA
IC=1.0A
IC=2.0A
500
μA
50
μA
1.0
μA
100
μA
0.45
V
1.0
V
1.5
V
V
30
120
10
VCE=10V, IC=1.0A, f=1KHz
VCE=10V, IC=1.0A
IC=1.0A, IB1=IB2=100mA
{
UNITS
μA
80
IC=2.0A, IB=400mA
VCE=4.0V, IC=2.0A
VCE=4.0V,
VCE=4.0V,
MAX
10
}
VBE(OFF)=3.7V, RL=20Ω
30
30
MHz
150
ns
450
ns
R0 (25-September 2008)
Central
TM
2N5333
Semiconductor Corp.
NPN SILICON POWER TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER
2) BASE
3) COLLECTOR (case)
MARKING: FULL PART NUMBER
R0 (25-September 2008)