2N6605 2N6606 2N6607 2N6608 w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6605 Series types are hermetically sealed silicon controlled rectifiers manufactured in a TO-18 case, designed for control systems and sensing circuit applications. SILICON CONTROLLED RECTIFIER 0.35 AMP, 30 THRU 200 VOLTS MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TC=25°C) Peak Repetitive Off-State Voltage Average On-State Current SYMBOL 2N6605 2N6606 2N6607 VDRM, VRRM IO 30 60 100 Peak One Cycle Surge Current (t=8.3ms) Peak Gate Voltage Operating Junction Temperature Storage Temperature 2N6608 UNITS 200 A ITSM VGM 6.0 A 8.0 V TJ Tstg -40 to +125 °C -40 to +150 °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IDRM Rated VDRM, RGK=1.0KΩ Rated VRRM 120 nA 250 nA 200 μA VTM VD=6.0V, RL=100Ω VD=6.0V, RL=100Ω IT=2.0A IH RGK=1.0KΩ IRRM IGT VGT V 0.35 0.8 V 2.0 V 5.0 mA R0 (30-March 2011) 2N6605 2N6606 2N6607 2N6608 SILICON CONTROLLED RECTIFIER 0.35 AMP, 30 THRU 200 VOLTS TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Gate 3) Anode MARKING: FULL PART NUMBER R0 (30-March 2011) w w w. c e n t r a l s e m i . c o m