2N6676 2N6677 2N6678 NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6676 SERIES types are NPN Silicon Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCEV VCEO 2N6676 450 2N6677 550 2N6678 650 UNITS V 300 350 400 V VEBO IC 8.0 V 15 A ICM IB 20 A -65 to +200 °C 1.0 °C/W IEBO BVCEO VEB=8.0V IC=200mA (2N6676) BVCEO BVCEO IC=200mA (2N6677) IC=200mA (2N6678) VCE(SAT) VBE(SAT) IC=15A, IB=3.0A IC=15A, IB=3.0A hFE Cob VCE=3.0V, IC=15A VCB=10V, IE=0, f=1.0MHz 8.0 ft td VCE=10V, IC=1.0A, f=5.0MHz 3.0 tf VCC=200V, IC=15A, IB1=IB2=3.0A tp=20μs, Duty Cycle≤2.0% VBB≈6.0V, RL=13.5Ω A W ΘJC ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEV, VBE(off)=1.5V ICEV VCE=Rated VCEV, VBE(off)=1.5V, TC=100°C tr ts 5.0 175 PD TJ, Tstg MAX 100 UNITS μA 1.0 mA 2.0 mA 300 V 350 V 400 V 1.5 V 1.5 V 500 pF 10 MHz 0.1 μs 0.6 μs 2.5 μs 0.5 μs R0 (26-July 2010) 2N6676 2N6677 2N6678 NPN SILICON POWER TRANSISTOR TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R0 (26-July 2010) w w w. c e n t r a l s e m i . c o m