2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: 702 SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL IGSSF IGSSR IDSS IDSS ID(ON) BVDSS VGS(th) VDS(ON) VDS(ON) VSD rDS(ON) rDS(ON) rDS(ON) rDS(ON) gFS SYMBOL VDS VDG VGS ID ID IS IDM ISM PD TJ, Tstg ΘJA 60 60 40 115 75 115 800 800 350 -65 to +150 357 CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN TYP VGS=20V VGS=20V VDS=60V, VGS=0 VDS=60V, VGS=0, TA=125°C VDS=10V, VGS=10V ID=10μA 500 60 105 VDS=VGS, ID=250μA VGS=10V, ID=500mA VGS=5.0V, ID=50mA VGS=0, IS=11.5mA VGS=10V, ID=500mA VGS=10V, ID=500mA, TA=100°C VGS=5.0V, ID=50mA VGS=5.0V, ID=50mA, TA=100°C VDS=10V, ID=200mA 1.0 2.1 3.7 6.2 80 MAX 100 100 1.0 500 UNITS V V V mA mA mA mA mA mW °C °C/W UNITS nA nA μA μA mA V 2.5 3.75 0.375 1.5 7.5 13.5 7.5 13.5 V V V V Ω Ω Ω Ω mS R5 (31-January 2011) 2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET ELECTRICAL SYMBOL Crss Ciss Coss ton toff CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MAX UNITS VDS=25V, VGS=0, f=1.0MHz 5.0 pF VDS=25V, VGS=0, f=1.0MHz 50 pF VDS=25V, VGS=0, f=1.0MHz 25 pF VDD=30V, ID=200mA, RG=25Ω, RL=150Ω 20 ns VDD=30V, ID=200mA, RG=25Ω, RL=150Ω 20 ns SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 702 R5 (31-January 2011) w w w. c e n t r a l s e m i . c o m