Central BUW34 BUW35 BUW36 TM Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BUW34, BUW35, and BUW36 types are silicon NPN power transistors designed for high voltage, fast switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL BUW34 BUW35 BUW36 UNITS Collector-Emitter Voltage VCES 500 800 900 V Collector-Emitter Voltage VCEO 400 400 450 V Emitter-Base Voltage VEBO 7.0 V A Collector Current IC 10 Base Current IB 5.0 A Power Dissipation PD 125 W TJ, Tstg -65 to +200 °C ΘJC 1.4 °C/W Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES ICES IEBO BVCEO BVCEO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE ton toff VCE=Rated VCES VCE=Rated VCES, TC=125°C VEB=7.0V IC=100mA (BUW34, BUW35) IC=100mA (BUW36) IC=5.0A, IC=8.0A, IC=5.0A, IB1=IB2=1.0A, VCC=250V μA 3 mA 1 mA V 450 IC=8.0A, IB=2.5A (BUW36) IC=5.0A, IB=1.0A IC=8.0A, IB=2.5A (BUW35, BUW36) UNITS 500 400 IB=1.0A IB=2.5A (BUW35) VCE=5.0V, IC=1.0A IC=5.0A, IB1=1.0A, VCC=250V MAX V 1.5 V 1.5 V 3.0 V 1.5 V 1.8 V 0.7 μs 3.8 μs 15 R0 (5-March 2008) Central TM Semiconductor Corp. BUW34 BUW35 BUW36 NPN SILICON POWER TRANSISTOR TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter C) Collector MARKING: FULL PART NUMBER R0 (5-March 2008)