C106B2 C106D2 C106M2 SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B2 Series types are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V to 600V. These devices are designed for applications such as temperature, light and speed control, and remote warning and triggering applications. MARKING: FULL PART NUMBER TO-202-2 THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL C106B2 Peak Repetitive Off-State Voltage VDRM, VRRM 200 RMS On-State Current (TC=85°C) IT(RMS) C106D2 400 C106M2 600 UNITS V 4.0 A 20 A 1.65 A2s PGM PG(AV) 0.5 W 0.1 W IGFM 0.2 A -40 to +110 °C Thermal Resistance TJ Tstg ΘJC Thermal Resistance ΘJA Peak One Cycle Surge Current, t=8.3ms I2t Value for Fusing Peak Gate Power Dissipation (TC=80°C) Average Gate Power Dissipation (TC=80°C) Peak Forward Gate Current (TC=80°C) Operating Junction Temperature Storage Temperature ITSM I2t ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TJ=110°C VTM IT=4.0A IGT IGT VGT VGT IH IH IH IL IL dv/dt VD=6.0V, RL=100Ω VD=6.0V, RL=100Ω, TJ=–40°C VD=6.0V, RL=100Ω VD=6.0V, RL=100Ω, TJ=–40°C VD=12V -40 to +150 °C 7.5 °C/W 80 °C/W TYP MAX 10 UNITS μA 100 μA 2.2 V 200 μA 500 μA 0.4 0.8 V 0.5 1.0 V 3.0 mA TJ=–40°C TJ=110°C 6.0 mA 2.0 mA VD=12V VD=12V, TJ=–40°C 5.0 mA VD=12V, VD=12V, VD=Rated VDRM, RGK=1.0KΩ, TJ=110°C 7.0 8.0 mA V/μs R0 (15-February 2011) C106B2 C106D2 C106M2 SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS TO-202-2 THYRISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate Tab is common to pin 2 MARKING: FULL PART NUMBER R0 (15-February 2011) w w w. c e n t r a l s e m i . c o m