CBRHD-01 SURFACE MOUNT HIGH DENSITY 0.8 AMP SILICON BRIDGE RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHD-01 is a silicon full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. MARKING CODE: CBD1 FEATURES: HD DIP CASE • This series is UL listed: file number E130224 • Efficient use of board space: requires only 42mm2 of board space vs. 120mm2 of board space needed for industry standard 1.0 Amp surface mount bridge rectifier. • 50% higher density (Amps/mm2) than the industry standard 1.0 Amp surface mount bridge rectifier. • Glass passivated chips for high reliability. MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage SYMBOL VRRM DC Blocking Voltage RMS Reverse Voltage Average Forward Current (TA=40°C) (Note1) Average Forward Current (TA=40°C) (Note 2) Peak Forward Surge Current Operating and Storage Junction Temperature Thermal Resistance (Note 3) 100 UNITS V VR VR(RMS) IO 100 V 70 V 0.5 A IO 0.8 A IFSM TJ, Tstg ΘJA 30 A -65 to +150 °C 85 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX IR VR= 100V 5.0 IR VF VR= 100V, TA=125°C IF=400mA CJ VR=4.0V, f=1.0MHz 500 1.0 9.0 UNITS µA µA V pF Notes: (1) Mounted on Glass-Epoxy PCB. (2) Mounted on Ceramic PCB. (3) Mounted on PCB with 0.5” x 0.5” copper pads. R2 (4-January 2010) CBRHD-01 SURFACE MOUNT HIGH DENSITY 0.8 AMP SILICON BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUTLINE MARKING CODE: CBD1 R2 (4-January 2010) w w w. c e n t r a l s e m i . c o m