CMPD7000E ENHANCED SPECIFICATION SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD7000E is an Enhanced version of the CMPD7000 Dual, Series Configuration, Ultra-High Speed Switching Diode. This device is manufactured by the epitaxial planar process, in an epoxy molded surface mount SOT-23 package, designed for high speed switching applications. MARKING CODE: C5CE SOT-23 CASE FEATURED ENHANCED SPECIFICATIONS: ♦ BVR from 100V min to 120V min. ♦ MAXIMUM RATINGS: (TA=25 °C) ♦ Peak Repetitive Reverse Voltage Average Forward Current Peak Forward Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance VF from 1.1V max to 1.0V max. SYMBOL VRRM IO IFM PD TJ, Tstg ΘJA 120 200 500 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR VR=50V 300 IR VR=50V, TA=125°C 100 IR VR=100V 500 IR=100µA 120 150 ♦ BVR IF=1.0mA 0.55 0.59 0.65 ♦ VF ♦ VF IF=10mA 0.67 0.72 0.77 ♦ VF IF=100mA 0.85 0.91 1.0 CT VR=0, f=1.0MHz 1.5 2.6 trr IR=IF=10mA, RL=100Ω, Rec. to 1.0mA 2.0 4.0 UNITS V mA mA mW °C °C/W UNITS nA μA nA V V V V pF ns ♦ Enhanced Specification R4 (27-January 2010) CMPD7000E ENHANCED SPECIFICATION SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: C5CE R4 (27-January 2010) w w w. c e n t r a l s e m i . c o m