CMPT5088 CMPT5089 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088 and CMPT5089 are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING CODES: CMPT5088: C1Q CMPT5089: C1R SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA CMPT5088 35 30 4.5 50 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMPT5088 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=20V 50 ICBO VCB=15V IEBO VEB=3.0V 50 IEBO VEB=4.5V BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE hFE hFE fT Cob Cib hfe NF IC=100μA IC=1.0mA IE=100μA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=5.0V, IC=0.1mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=500μA, f=20MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=100μA, RS=10kΩ, f=10Hz to 15.7kHz CMPT5089 30 25 CMPT5089 MIN MAX 50 - 35 30 4.5 300 350 300 50 350 0.5 0.8 900 4.0 15 1400 30 25 4.5 400 450 400 50 450 100 0.5 0.8 1200 4.0 15 1800 - 3.0 - 2.0 UNITS V V V mA mW °C °C/W UNITS nA nA nA nA V V V V V MHz pF pF dB R7 (9-September 2010) CMPT5088 CMPT5089 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPT5088: C1Q CMPT5089: C1R R7 (9-September 2010) w w w. c e n t r a l s e m i . c o m