CMPTA29 SURFACE MOUNT HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA29 is an NPN silicon darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high voltage and high gain. MARKING CODE: C29 SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCES VEBO IC UNITS 100 V 100 V 12 V 500 mA 350 mW PD TJ, Tstg -65 to +150 °C ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS ICES VCE=80V 500 nA ICBO IEBO VCB=80V 100 nA VBE=10V 100 nA BVCES IC=100µA 100 V BVCBO IC=100µA 100 V BVEBO VCE(SAT) IE=10µA IC=10mA, IB=10µA IC=100mA, IB=100µA 12 VCE(SAT) VBE(ON) MIN hFE VCE=5.0V, IC=100mA VCE=5.0V, IC=10mA 10,000 hFE VCE=5.0V, IC=100mA 10,000 fT VCE=5.0V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz Cob V 1.2 V 1.5 V 2.0 V 125 MHz 8.0 pF R4 (3-February 2010) CMPTA29 SURFACE MOUNT HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C29 R4 (3-February 2010) w w w. c e n t r a l s e m i . c o m