CMUT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401E is a PNP Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging. MARKING CODE: 4C5 FEATURES: • High Collector Breakdown Voltage 250V • Low Leakage Current 50nA Max APPLICATIONS: • Low Saturation Voltage 150mV Max @ 50mA • General purpose switching and amplification • Complementary Device CMUT5551E • Telephone applications • SOT-523 Surface Mount Package SOT-523 CASE MAXIMUM RATINGS: (TA=25°C) ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage ♦ Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL UNITS VCBO VCEO 250 V 220 V VEBO IC 7.0 V 600 mA PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN 250 mW -65 to +150 °C 500 °C/W MAX UNITS nA ICBO VCB=120V 50 ICBO VCB=120V, TA=100°C VEB=3.0V 50 μA 50 nA IEBO ♦ BVCBO ♦ BVCEO ♦ BVEBO ♦ VCE(SAT) ♦ VCE(SAT) VBE(SAT) VBE(SAT) IC=100µA IC=1.0mA 250 220 V IE=10µA 7.0 V IC=10mA, IC=50mA, V IB=1.0mA IB=5.0mA 100 mV 150 mV IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 1.00 V 1.00 V ♦ Enhanced Specification R1 (9-February 2010) CMUT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX SYMBOL ♦ hFE ♦ hFE ♦ hFE ♦ hFE VCE=5.0V, IC=1.0mA 100 VCE=5.0V, IC=10mA 100 VCE=5.0V, IC=50mA 75 VCE=10V, IC=150mA 25 fT VCE=10V, IC=10mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz hfe VCE=10V, IC=1.0mA, f=1.0kHz NF VCE=5.0V, IC=200μA, RS=10Ω, f=10Hz to 15.7kHz UNITS 300 40 300 MHz 6.0 pF 200 8.0 dB ♦ Enhanced Specification SOT-523 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: 4C5 R1 (9-February 2010) w w w. c e n t r a l s e m i . c o m