CMXD2004TO SURFACE MOUNT TRIPLE ISOLATED OPPOSING HIGH VOLTAGE SILICON SWITCHING DIODES SOT-26 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Average Forward Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004TO consists of three (3) Isolated High Voltage Silicon Switching Diodes arranged in an alternating configuration in a SUPERmini SOT-26 surface mount package, and designed for high voltage switching applications. This device can be configured as a 900V switching diode. See optional mounting pad configuration. MARKING CODE: X04TO SYMBOL UNITS VR 240 V VRRM IO 300 V 200 mA IF IFRM IFSM 225 mA 625 mA 4.0 A IFSM PD 1.0 A 350 mW TJ, Tstg ΘJA -65 to +150 °C 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR UNITS BVR VR=240V VR=240V, TA=150°C IR=100μA VF IF=100mA 1.0 V CT VR=0, f=1.0MHz 5.0 pF trr IF=IR=30mA, Irr=3.0mA, RL=100Ω 50 ns IR 100 nA 100 μA 300 V R2 (12-February 2010) CMXD2004TO SURFACE MOUNT TRIPLE ISOLATED OPPOSING HIGH VOLTAGE SILICON SWITCHING DIODES SOT 26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION OPTIONAL MOUNTING PADS For 900V Series Configuration (Dimensions in mm) LEAD CODE: 1) Anode D1 2) Cathode D2 3) Anode D3 4) Cathode D3 5) Anode D2 6) Cathode D1 MARKING CODE: X04TO R2 (12-February 2010) w w w. c e n t r a l s e m i . c o m