CMXD3003TO SURFACE MOUNT TRIPLE ISOLATED OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES SOT-26 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD3003TO consists of three (3) Isolated Low Leakage Silicon Switching Diodes arranged in an alternating configuration in a SUPERmini SOT-26 surface mount package, and is designed for low leakage switching applications. This device can be configured as a 540V switching diode. See optional mounting pad configuration. MARKING CODE: C03TO APPLICATIONS: • Voltage Multiplier • Steering Diode Array • General Purpose Switching MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Average Forward Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0µs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR IO 180 UNITS V 200 mA IF 600 mA IFRM IFSM 700 mA 2.0 A IFSM PD 1.0 A 350 mW -65 to +150 °C 357 °C/W TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR VR=125V 1.0 IR IR IR VR=125V, TA=150°C VR=180V UNITS nA 3.0 µA 10 nA 5.0 µA BVR VR=180V, TA=150°C IR=5.0µA 200 VF IF=1.0mA 0.62 0.72 V VF IF=10mA 0.72 0.83 V VF IF=50mA 0.80 0.89 V VF IF=100mA 0.83 0.93 V VF IF=200mA 0.87 1.10 V VF IF=300mA 0.90 1.15 V CT VR=0, f=1.0MHz 4.0 pF V R1 (26-July 2011) CMXD3003TO SURFACE MOUNT TRIPLE ISOLATED OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES SOT 26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION OPTIONAL MOUNTING PADS For 540V Series Configuration (Dimensions in mm) LEAD CODE: 1) Anode D1 2) Cathode D2 3) Anode D3 4) Cathode D3 5) Anode D2 6) Cathode D1 MARKING CODE: C03TO R1 (26-July 2011) w w w. c e n t r a l s e m i . c o m