PROCESS CP359R Small Signal MOSFET N-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 9.1 x 9.1 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 2.5 MILS DIAMETER Source Bonding Pad Area 3.9 x 3.9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 6 INCH WAFER 290,000 PRINCIPAL DEVICE TYPE CMRDM3590 R0 (13-May 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP359R Typical Electrical Characteristics R0 (13-May 2010) w w w. c e n t r a l s e m i . c o m