PROCESS CP757X Small Signal MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 22 x 17 MILS Die Thickness 5.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 14 x 9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 6 INCH WAFER 63,570 PRINCIPAL DEVICE TYPE CMLDM5757 R0 (2-December 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP757X Typical Electrical Characteristics R0 (2-December 2010) w w w. c e n t r a l s e m i . c o m