PROCESS CPD102X Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 210,600 PRINCIPAL DEVICE TYPES CMDD6263 CMKD6263 CMLD6263 Series CMOD6263 CMPD6263 Series CMSD6263 Series CMUD6263E Series 1N6263 R0 (27-September 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD102X Typical Electrical Characteristics R0 (27-September 2010) w w w. c e n t r a l s e m i . c o m