PROCESS CPD16 Ultra Fast Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 51 x 51 MILS Die Thickness 14 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization Ni/Au - 5,000Å/2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 4,250 PRINCIPAL DEVICE TYPES UES1001 thru UES1003 UF4001 thru UF4007 CMR1U-01 Series CMR1U-01M Series BACKSIDE CATHODE R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD16 Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m