PROCESS CPD74 Switching Diode Monolithic Isolated Quad Switching Diode Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Anode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Cathode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Top Side Metalization Al - 12,000Å Back Side Metalization Au - 5,000Å GEOMETRY GROSS DIE PER 3 INCH WAFER 10,000 PRINCIPAL DEVICE TYPES CMEDA-6i R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD74 Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m