PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 137,880 BACKSIDE CATHODE R0 PRINCIPAL DEVICE TYPES CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 CMPD2838 CMPD7000 R5 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD83V Typical Electrical Characteristics R5 (22-March 2010) w w w. c e n t r a l s e m i . c o m