CQ223-2M CQ223-2N SURFACE MOUNT 2 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-2M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage VDRM RMS On-State Current (TC=80°C) IT(RMS) Peak One Cycle Surge, t=10ms CQ223-2M CQ223-2N 600 800 2.0 V A 10 A 0.5 A2s PGM PG (AV) IGM 3.0 W 0.2 W 1.2 A -40 to +125 °C Storage Temperature TJ Tstg -40 to +150 °C Thermal Resistance ΘJA 62.5 °C/W I2t Value for Fusing, t=10ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Gate Current, tp=10μs Operating Junction Temperature ITSM I2t UNITS ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM Rated VDRM, RGK=1KΩ Rated VDRM, RGK=1KΩ, TC=125°C IGT IGT VD=12V, QUAD I, II, III VD=12V, QUAD IV IH VGT TYP MAX UNITS 5.0 μA 200 μA 1.35 5.00 mA 3.75 8.00 mA RGK=1KΩ VD=12V, QUAD I, II, III, IV 1.2 5.0 mA 1.1 1.8 V VTM ITM=2.0A, tp=380μs 1.50 1.75 V VTM ITM=3.0A, tp=380μs VD=2/3 VDRM, TC=125°C 1.7 2.0 V dv/dt 2.5 V/μs R1 (24-June 2010) CQ223-2M CQ223-2N SURFACE MOUNT 2 AMP SILICON TRIAC 600 THRU 800 VOLTS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) Gate 4) MT2 MARKING: FULL PART NUMBER R1 (24-June 2010) w w w. c e n t r a l s e m i . c o m