CSD-4M CSD-4N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-4M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER DPAK THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=85°C) Peak One Cycle Surge Current, t=10ms SYMBOL CSD-4M CSD-4N UNITS VDRM, VRRM IT(RMS) 600 800 V I2t Value for Fusing, t=10ms Peak Gate Power, tp=20μs Average Gate Power Dissipation Peak Gate Current, tp=20μs Critical Rate of Rise of On-State Current Operating Junction Temperature Storage Temperature Rated VDRM, VRRM, RGK=1KΩ Rated VDRM, VRRM, RGK=1KΩ, TC=125°C VD=12V, RL=10Ω IH VGT VTM dv/dt A 30 A 4.5 A2s PGM PG (AV) 3.0 W 0.2 W IGM di/dt 1.2 A 50 A/μs TJ Tstg -40 to +125 °C -40 to +150 °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM IDRM, IRRM IGT 4.0 ITSM I2t 20 TYP MAX UNITS 10 μA 200 μA 38 200 μA IT=50mA, RGK=1KΩ VD=12V, RL=10Ω 0.25 2.0 mA 0.55 0.8 V ITM=8.0A, tp=380μs VD=2 /3 VDRM, RGK=1KΩ, TC=125°C 1.6 1.8 10 V V/μs R1 (12-February 2010) CSD-4M CSD-4N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 600 THRU 800 VOLTS DPAK THYRISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate 4) Anode MARKING: FULL PART NUMBER R1 (12-February 2010) w w w. c e n t r a l s e m i . c o m