CZT2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL UNITS VCBO VCEO 60 60 V V VEBO IC 5.0 V 600 mA PD TJ, Tstg 2.0 W -65 to +150 °C ΘJA 62.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS ICBO VCB=50V 10 nA ICBO ICEV VCB=50V, TA=125°C VCE=30V, VBE=0.5V 10 µA 50 nA BVCBO IC=10µA 60 V BVCEO IC=10mA 60 V BVEBO IE=10µA 5.0 VCE(SAT) IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE IC=500mA, IB=50mA VCE=10V, IC=0.1mA MIN V 0.4 V 1.6 V 1.3 V 2.6 V 75 VCE=10V, IC=1.0mA VCE=10V, IC=10mA 100 VCE=10V, IC=150mA VCE=10V, IC=500mA 100 100 300 50 R5 (1-March 2010) CZT2907A SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN fT VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz 200 Cob Cib ton td tr toff ts tf MAX UNITS MHz 8.0 pF VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 30 pF 45 ns 10 ns VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA 40 ns 100 ns 80 ns 30 ns VCC=6.0V, IC=150mA, VCC=6.0V, IC=150mA, IB1=IB2=15mA IB1=IB2=15mA SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R5 (1-March 2010) w w w. c e n t r a l s e m i . c o m