MCR703A MCR706A MCR704A MCR708A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 100 THRU 600 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR MCR703A, MCR704A, MCR706A, and MCR708A are epoxy molded Silicon Controlled Rectifiers designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER DPAK THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL MCR703A MCR704A Peak Repetitive Off-State Voltage RMS On-State Current (TC=85°C) Peak non-Repetitive Surge Current (1/2 cycle Sine wave, 50Hz/60Hz) I2t Value for Fusing, t=10ms Peak Gate Power, tp=1.0μs VDRM, VRRM IT(RMS) 100 MCR706A MCR708A UNITS 200 400 600 V 4.0 ITSM I2t A 15 A 1.1 A2s 0.5 W 0.1 W PGM PG (AV) IGM 0.2 A Critical Rate of Rise of On-State Current di/dt 50 A/μs Storage Temperature Tstg TJ -40 to +150 °C -40 to +125 °C Average Gate Power Dissipation Peak Gate Current, tp=1.0μs Junction Temperature ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IDRM, IRRM IDRM, IRRM IGT Rated VDRM, VRRM, RGK=1.0KΩ Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C VD=12V, RL=10Ω IH VGT IT=50mA, RGK=1.0KΩ VD=12V, RL=10Ω VTM ITM=8.0A, tp=380μs dv/dt VD=2 /3 VDRM, RGK=1.0KΩ, TC=125°C MIN 10 TYP MAX UNITS 10 μA 200 μA 38 75 μA 0.25 2.0 mA 0.55 0.8 V 1.6 1.8 V V/μs R1 (1-March 2010) MCR703A MCR706A MCR704A MCR708A SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 100 THRU 600 VOLTS DPAK THYRISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Anode 3) Cathode 4) Anode MARKING: FULL PART NUMBER R1 (1-March 2010) w w w. c e n t r a l s e m i . c o m