MJE710 MJE711 MJE720 MJE721 MJE712 MJE722 Central PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE710, MJE720 series types are Complementary Silicon Power Transistors designed for low power amplifier and medium speed switching aplications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Base Current IB Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC MJE710 MJE720 40 40 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise SYMBOL TEST CONDITIONS ICEV VCE=Rated VCEO, VBE(OFF)=1.5V ICEV VCE=Rated VCEO, VBE(OFF)=1.5V (TC=125°C) ICEO VCE=1/2 Rated VCEO IEBO VEB=5.0V BVCEO IC=50mA (MJE710, MJE720) BVCEO IC=50mA (MJE711, MJE721) BVCEO IC=50mA (MJE712, MJE722) VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=1.5A, IB=300mA VBE(SAT) IC=1.5A, IB=300mA VBE(ON) VCE=1.0V, IC=500mA hFE VCE=1.0V, IC=150mA hFE VCE=1.0V, IC=500mA hFE VCE=1.0V, IC=1.0A noted) MIN MJE711 MJE721 60 60 5.0 1.5 0.5 1.25 20 -65 to +150 100 6.25 MJE712 MJE722 80 80 MAX 100 500 500 1.0 40 60 80 0.15 0.4 1.0 1.3 0.95 UNITS V V V A A W W °C °C/W °C/W UNITS μA μA μA mA V V V V V V V V 40 20 8.0 R1 (16-September 2008) Central TM Semiconductor Corp. MJE710 MJE711 MJE720 MJE721 MJE712 MJE722 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-126 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING: FULL PART NUMBER R1 (16-September 2008)