PN2221 PN2222 PN2221A PN2222A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PN2221, PN2222 series types are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature PN2221 PN2222 60 30 5.0 PN2221 PN2222 MIN MAX 10 10 60 30 5.0 0.4 1.6 1.3 2.6 PN2221 PN2221A MIN MAX VCE=10V, IC=0.1mA 20 VCE=10V, IC=1.0mA 25 VCE=10V, IC=10mA 35 VCE=10V, IC=150mA 40 120 VCE=1.0V, IC=150mA 20 VCE=10V, IC=500mA (PN2221, PN2222) 20 VCE=10V, IC=500mA (PN2221A, PN2222A) 25 VCE=20V, IC=20mA, f=100MHz (except PN2222A) 250 VCE=20V, IC=20mA, f=100MHz (PN2222A) VCB=10V, f=100kHz 8.0 VCC=30V, IC=150mA, IB=15mA 35 VCC=30V, IC=150mA, IB1=IB2=15mA 285 ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=50V ICBO VCB=60V ICEV VCE=60V, VEB=3.0V IEBO VEB=3.0V BVCBO IC=10μA BVCEO IC=10mA BVEBO IE=10μA VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA VBE(SAT) IC=500mA, IB=50mA hFE hFE hFE hFE hFE hFE hFE fT fT Cob ton toff SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg PN2221A PN2222A 75 40 6.0 800 625 -65 to +150 PN2221A PN2222A MIN MAX 10 10 10 75 40 6.0 0.3 1.0 1.2 2.0 PN2222 PN2222A MIN MAX 35 50 75 100 300 50 30 40 250 300 8.0 35 285 UNITS V V V mA mW °C UNITS nA nA nA nA V V V V V V V MHz MHz pF ns ns R1 (30-January 2012) PN2221 PN2222 PN2221A PN2222A NPN SILICON TRANSISTOR TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (30-January 2012) w w w. c e n t r a l s e m i . c o m