PN3566 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PN3566 is a small signal NPN silicon transistor, manufactured by the epitaxial planar process, designed for general purpose amplifier applications where high collector current is required. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL UNITS VCBO VCEO 40 V 30 V VEBO IC 5.0 V 600 mA 625 mW PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN -65 to +150 °C 200 °C/W MAX UNITS ICBO VCB=20V 50 nA IEBO 10 µA BVCBO VEB=5.0V IC=100µA 40 V BVCEO IC=30mA 30 V BVEBO IE=10µA IC=100mA, IB=10mA VCE=1.0V, IC=100mA 5.0 VCE=10V, IC=2.0mA VCE=10V, IC=10mA VCB=10V, IE=0 80 VCE(SAT) VBE(ON) hFE hFE Cob 150 V 1.0 V 0.9 V 600 25 pF R0 (22-July 2010) PN3566 NPN SILICON TRANSISTOR TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (22-July 2010) w w w. c e n t r a l s e m i . c o m