FDD8444_F085 ® N-Channel PowerTrench MOSFET 40V, 50A, 5.2mΩ Features Applications Typ rDS(on) = 4mΩ at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architecture and VRMs Qualified to AEC Q101 Primary Switch for 12V Systems A REE I DF M ENTATIO LE N MP LE RoHS Compliant ©2010 Fairchild Semiconductor Corporation FDD8444_F085 Rev C (W) 1 www.fairchildsemi.com FDD8444_F085 N-Channel PowerTrench® MOSFET October 2010 Symbol VDSS Drain to Source Voltage VGS Parameter Gate to Source Voltage Drain Current Continuous (VGS = 10V) ID (Note 1) PD Units V ±20 V 145 Continuous (VGS = 10V, with RθJA = 52oC/W) 20 Pulsed EAS Ratings 40 A Figure 4 Single Pulse Avalanche Energy (Note 2) 535 mJ Power Dissipation 153 W Derate above 25oC 1.02 W/oC -55 to +175 oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Maximum Thermal Resistance, Junction to Case 2 Maximum Thermal Resistance, Junction to Ambient TO-252, 1in copper pad area 0.98 o C/W 52 o C/W Package Marking and Ordering Information Device Marking FDD8444 Device FDD8444_F085 Package TO-252AA Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V 40 - - - - 1 - - 250 VGS = ±20V - - ±100 nA VGS = VDS, ID = 250μA 2 2.5 4 V ID = 50A, VGS= 10V - 4 5.2 ID = 50A, VGS= 10V, TJ = 175oC - 7.2 9.4 VDS = 25V, VGS = 0V, f = 1MHz - 6195 - pF - 585 - pF pF VDS = 32V VGS = 0V TJ = 150oC μA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 332 - RG Gate Resistance f = 1MHz - 1.9 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 89 116 nC nC Qg(5) Total Gate Charge at 5V VGS = 0 to 5V Qg(TH) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller“ Charge FDD8444_F085 Rev C (W) 2 VDD = 20V ID = 50A Ig = 1.0mA 43 56 - 11 14.3 nC - 23 - nC - 11 - nC - 20 - nC www.fairchildsemi.com FDD8444_F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 135 ns td(on) Turn-On Delay Time - 12 - ns tr Turn-On Rise Time - 78 - ns td(off) Turn-Off Delay Time - 48 - ns tf Turn-Off Fall Time - 15 - ns toff Turn-Off Time - - 95 ns ISD = 50A - 0.9 1.25 ISD = 25A - 0.8 1.0 VDD = 20V, ID = 50A VGS = 10V, RGS = 2Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 50A, dIF/dt = 100A/μs V - 39 51 ns - 45 59 nC Notes: 1: Package current limitation is 50A. 2: Starting TJ = 25oC, L = 0.67mH, IAS = 40A This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDD8444_F085 Rev C (W) 3 www.fairchildsemi.com FDD8444_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25oC unless otherwise noted 1.0 VGS = 10V CURRENT LIMITED BY PACKAGE 140 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 160 1.2 120 0.8 100 0.6 0.4 0.2 0.0 80 60 40 20 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 0 25 175 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs Case Temperature Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0.01 -5 10 SINGLE PULSE -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 2000 VGS = 10V IDM, PEAK CURRENT (A) 1000 TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDD8444_F085 Rev C (W) 4 www.fairchildsemi.com FDD8444_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 500 10us IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100us 10 CURRENT LIMITED BY PACKAGE 1 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms SINGLE PULSE TJ = MAX RATED 10ms TC = 25oC 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1 0.01 100 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 100 100 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 80 VDD = 5V TJ = 175oC 60 TJ = 25oC 40 TJ = -55oC 20 0 2.0 2.5 3.0 3.5 4.0 4.5 80 VGS = 4V 20 0 0.0 5.0 10 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 8 6 o 2 TJ = 25 C 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDD8444_F085 Rev C (W) 0.6 0.9 1.2 1.5 Figure 8. Saturation Characteristics TJ = 175oC 4 0.3 VDS, DRAIN TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 12 VGS = 4.5V 40 Figure 7. Transfer Characteristics ID = 50A VGS = 5V 60 VGS, GATE TO SOURCE VOLTAGE (V) 14 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 6. Unclamped Inductive Switching Capability 1.8 1.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 50A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDD8444_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 1.2 1.15 NORMALIZED GATE THRESHOLD VOLTAGE 1.1 1.10 1.0 0.9 1.05 0.8 1.00 0.7 0.6 0.95 0.5 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 10000 Ciss Coss 1000 Crss f = 1MHz VGS = 0V 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 Figure 13. Capacitance vs Drain to Source Voltage FDD8444_F085 Rev C (W) -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pF) ID = 250μA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = 250μA 10 ID = 50A VDD = 15V 8 VDD = 20V 6 VDD = 25V 4 2 0 0 20 40 60 Qg, GATE CHARGE(nC) 80 100 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDD8444_F085 N-Channel PowerTrench® MOSFET Typical Characteristics *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 FDD8444_F085 Rev C (W) 7 www.fairchildsemi.com FDD8444_F085 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Power-SPM™ AccuPower™ F-PFS™ ®* PowerTrench® Auto-SPM™ FRFET® SM Global Power Resource PowerXS™ Build it Now™ The Power Franchise® ® Green FPS™ Programmable Active Droop™ CorePLUS™ QFET® Green FPS™ e-Series™ CorePOWER™ QS™ Gmax™ CROSSVOLT™ TinyBoost™ Quiet Series™ GTO™ CTL™ TinyBuck™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyCalc™ ™ ISOPLANAR™ DEUXPEED® TinyLogic® Dual Cool™ MegaBuck™ TINYOPTO™ ® Saving our world, 1mW/W/kW at a time™ EcoSPARK MICROCOUPLER™ TinyPower™ SignalWise™ EfficentMax™ MicroFET™ TinyPWM™ ESBC™ SmartMax™ MicroPak™ TinyWire™ SMART START™ MicroPak2™ ® TriFault Detect™ SPM® MillerDrive™ TRUECURRENT™* STEALTH™ MotionMax™ Fairchild® μSerDes™ SuperFET™ Motion-SPM™ Fairchild Semiconductor® SuperSOT™-3 OptiHiT™ FACT Quiet Series™ SuperSOT™-6 OPTOLOGIC® FACT® UHC® OPTOPLANAR® SuperSOT™-8 FAST® ® Ultra FRFET™ SupreMOS™ FastvCore™ UniFET™ SyncFET™ FETBench™ VCX™ Sync-Lock™ FlashWriter® * PDP SPM™ VisualMax™ FPS™ XS™