FAIRCHILD FQD20N06TM

FQD20N06
N-Channel QFET® MOSFET
60 V, 16.8 A, 63 m
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
• 16.8 A, 60 V, RDS(on) = 63 m (Max) @ VGS = 10V,
ID = 8.4 A
• Low Gate Charge (Typ.11.5 nC)
• Low Crss (Typ. 25 pF)
• 100% Avalanche Tested
D

D

G
G
D-PAK
S
ID

TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
dv/dt
PD
- Pulsed
TL
FQD20N06
60
Unit
V
16.8
A
10.6
A
67.2
A
 25
V
(Note 2)
155
mJ
(Note 1)
16.8
A
(Note 1)
3.8
7.0
2.5
mJ
V/ns
W
38
0.30
-55 to +150
W
W/°C
°C
300
°C
FQD20N06
3.28
Unit
°C/W
(Note 1)
(Note 3)
Power Dissipation (TC = 25°C)
TJ, TSTG


S
Absolute Maximum Ratings
Symbol
VDSS
 
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RJA
Thermal Resistance, Junction-to-Ambient *
50
°C/W
RJA
Thermal Resistance, Junction-to-Ambient, Max.
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
FQD20N06 Rev. C0
1
www.fairchildsemi.com
FQD20N06 N-Channel QFET® MOSFET
April 2013
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions

Off Characteristics
Min
Typ
Max
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
60
--
--
V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 A, Referenced to 25°C
--
0.07
--
V/°C
VDS = 60 V, VGS = 0 V
--
--
1
A
VDS = 48 V, TC = 125°C
--
--
10
A
Gate-Body Leakage Current, Forward
VGS = 25 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -25 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
IDSS
IGSSF
Zero Gate Voltage Drain Current

On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 8.4 A
---
0.050
0.063

gFS
Forward Transconductance
VDS = 25 V, ID = 8.4 A
--
10
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
450
590
pF
--
170
220
pF
--
25
35
pF

Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance

Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 10 A,
RG = 25 
(Note 4)
VDS = 48 V, ID = 20 A,
VGS = 10 V
(Note 4)
--
5
20
ns
--
45
100
ns
--
20
50
ns
--
25
60
ns
--
11.5
15
nC
--
3
--
nC
--
4.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
16.8
A
ISM
--
--
67.2
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 16.8 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IF = 20 A,
dIF / dt = 100 A/s
--
43
--
ns
--
50
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 640H, IAS = 16.8A, VDD = 25V, RG = 25 Starting TJ = 25°C
3. ISD ≤ 20A, di/dt ≤ 300A/s, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
FQD20N06 Rev. C0
2
www.fairchildsemi.com
FQD20N06 N-Channel QFET® MOSFET
Electrical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
1
ID, Drain Current [A]
ID, Drain Current [A]
Top :
1
10
10
0
10
150℃
25℃
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
0
10
※ Notes :
1. VDS = 25V
2. 250μs Pulse Test
-55℃
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
80
IDR, Reverse Drain Current [A]
R DS(O N) [m Ω ],
Drain-Source On-Resistance
100
VGS = 10V
VGS = 20V
60
40
20
※ Note : TJ = 25℃
0
0
10
20
30
40
50
1
10
0
10
-1
10
ID, Drain Current [A]
0.2
Coss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
400
Crss
10
0
1.2
1.4
VDS = 30V
8
6
4
2
※ Note : ID = 20A
0
2
4
6
8
10
12
1
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
FQD20N06 Rev. C0
1.0
VDS = 48V
0
10
0.8
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
0
-1
10
0.6
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
V G S, Gate-Source Voltage [V]
Capacitance [pF]
800
0.4
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
25℃
150℃
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
FQD20N06 N-Channel QFET® MOSFET
Typical Characteristics
(Continued)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.0
1.1
1.5
1.0
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
-100
-50
0
50
100
0.5
150
※ Notes :
1. VGS = 10 V
2. ID = 8.4 A
0.0
-100
200
-50
0
o
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3
20
10
Operation in This Area
is Limited by R DS(on)
ID, Drain Current [A]
ID, Drain Current [A]
2
10
100 s
1 ms
1
10
10 ms
DC
0
10
※ Notes :
15
10
5
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
-1
0
10
1
10
0
25
2
10
10
50
Figure 9. Maximum Safe Operating Area
100
125
150
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
0
0 .2
※ N otes :
1 . Z θ J C( t ) = 3 . 2 8 ℃ /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .1
0 .0 5
10
0 .0 2
0 .0 1
-1
PDM
s in g le p u ls e
t1
Zθ
JC
(t), Thermal Response
75
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
FQD20N06 Rev. C0
4
www.fairchildsemi.com
FQD20N06 N-Channel QFET® MOSFET
Typical Characteristics
FQD20N06 N-Channel QFET® MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
ID (t)
tp
©2001 Fairchild Semiconductor Corporation
FQD20N06 Rev. C0
VDS (t)
VDD
DUT
10V
tp
5
Time
www.fairchildsemi.com
FQD20N06 N-Channel QFET® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2001 Fairchild Semiconductor Corporation
FQD20N06 Rev. C0
6
www.fairchildsemi.com
FQD20N06 N-Channel QFET® MOSFET
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
FQD20N06 Rev. C0
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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2.
A critical component in any component of a life support, device, or
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2001 Fairchild Semiconductor Corporation
FQD20N06 Rev. C0
8
www.fairchildsemi.com
FQD20N06 N-Channel QFET® MOSFET
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