DMG8601UFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2KV "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • NEW PRODUCT • • • • Case: DFN3030-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish - NiPdAu over Copper lead frame. Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.0172 grams (approximate) 5 6 7 8 8 7 6 5 2 3 4 D1/D2 G2 4 Top View ESD PROTECTED TO 2kV Maximum Ratings S2 G1 S1 3 2 1 1 BOTTOM VIEW Pin Configuration Bottom View TOP VIEW Equivalent Circuit @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Unit V V IDM Value 20 ±12 6.1 5.2 27 Characteristic Power Dissipation (Note 1) Symbol Value Unit PD 0.92 W Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range RθJA TJ, TSTG 136 -55 to +150 °C/W °C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Steady State Pulsed Drain Current TA = 25°C TA = 70°C ID A A Thermal Characteristics Notes: 1. Device mounted on FR-4 PCB with minimum recommended pad layout. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMG8601UFG Document number: DS31788 Rev. 4 - 2 1 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG8601UFG Electrical Characteristics @TA = 25°C unless otherwise specified Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS BVSGS 20 ±12 - 1.0 ±10 - V μA μA V VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±10V, VDS = 0V VDS = 0V, IG = ±250μA VGS(th) 0.35 - 0.95 V RDS (ON) - 17 20 25 23 27 34 mΩ |Yfs| VSD - 10 0.7 1.0 S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 6.5A VGS = 2.5V, ID = 5.5A VGS = 1.8V, ID = 3.5A VDS = 10V, ID = 5A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 143 74 29 202 8.8 1.4 3.0 53 78 562 234 - pF pF pF Ω nC nC nC ns ns ns ns - - Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 6.5A VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω 4. Short duration pulse test used to minimize self-heating effect. 30 40 VGS = 8.0V 36 VGS = 4.5V ID, DRAIN CURRENT (A) 28 VDS = 5V 25 VGS = 3.0V 32 ID, DRAIN CURRENT (A) NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage Gate-Source Breakdown Voltage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS = 2.5V 24 20 16 12 20 15 10 VGS = 2.0V 8 TA = 150°C 5 TA = 125°C 0 TA = 85°C T A = 25°C 4 TA = -55°C 0 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMG8601UFG Document number: DS31788 Rev. 4 - 2 3.0 2 of 6 www.diodes.com 0 0.5 1.0 1.5 2.0 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3.0 October 2009 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 0.04 0.03 VGS = 1.8V 0.02 VGS = 2.5V VGS = 4.5V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 5.0V ID = 10A 1.1 0.9 0.7 -25 0.03 T A = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C TA = -55°C 0.01 0 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 2.5V ID = 5.5A 0.5 -50 VGS = 4.5V 0.04 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.5 1.3 0.05 30 1.7 0.05 0.04 VGS = 2.5V ID = 5.5A 0.03 0.02 VGS = 5.0V ID = 10A 0.01 0 -50 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 1.6 20 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG8601UFG 1.2 TA = 25°C 12 0.8 ID = 1mA ID = 250µA 0.4 8 4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG8601UFG Document number: DS31788 Rev. 4 - 2 3 of 6 www.diodes.com 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current October 2009 © Diodes Incorporated DMG8601UFG IGSS, LEAKAGE CURRENT (nA) IDSS, LEAKAGE CURRENT (nA) 10,000 10,000 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 150°C 1,000 TA = 125°C TA = 85°C 100 T A = 25°C 10 TA = -55°C T A = 25°C 1 1 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) 1 20 Fig. 9 Typical Leakage Current vs. Drain-Source Voltage 2 3 4 5 6 7 8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 10 Gate-Source Leakage Current vs. Voltage 10,000 IGSS, LEAKAGE CURRENT (nA) TA = 150°C 1,000 TA = 125°C 100 T A = 85°C TA = 25°C 10 TA = -55°C 1 1 2 3 4 5 6 7 8 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 11 Gate-Source Leakage Current vs. Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 100,000 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 136°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMG8601UFG Document number: DS31788 Rev. 4 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 October 2009 © Diodes Incorporated DMG8601UFG Ordering Information (Note 5) Part Number DMG8601UFG-7 Notes: Case DFN3030-8 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. NEW PRODUCT Marking Information YYWW DFN3030-8 2N4 = Product marking code YYWW = Date code marking YY = Last digit of year (ex: 09 for 2009) WW = Week code 01 to 52 2N4 Package Outline Dimensions A DFN3030-8 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.15 ⎯ ⎯ b 0.29 0.39 0.34 D 2.90 3.10 3.00 D2 2.19 2.39 2.29 e 0.65 ⎯ ⎯ E 2.90 3.10 3.00 E2 1.64 1.84 1.74 L 0.30 0.60 0.45 All Dimensions in mm A3 SEATING PLANE A1 e b .2 R0 E 00 E2 L D2 D Suggested Pad Layout Z X1 X2 Dimensions Value (in mm) Z 2.59 G 0.11 X1 2.49 X2 0.65 Y 0.39 C 0.65 G Y DMG8601UFG Document number: DS31788 Rev. 4 - 2 C 5 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG8601UFG IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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