DXT3904 NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DXT3906) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT89-3L Mechanical Data • • • • • • • Case: SOT89-3L Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) COLLECTOR 2,4 3 E C 4 2 C 1 BASE 1 B 3 EMITTER TOP VIEW Schematic and Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V IC 200 mA Value Unit Collector Current – Continuous Thermal Characteristics Characteristic Symbol Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Operating and Storage Temperature Range Notes: 1. 2. 3. PD 1 W RθJA 125 °C/W Tj, TSTG -55 to +150 °C No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS31141 Rev. 3 - 2 1 of 4 www.diodes.com DXT3904 © Diodes Incorporated @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL 60 40 6.0 ⎯ ⎯ ⎯ ⎯ ⎯ 50 50 V V V nA nA hFE 40 70 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ ⎯ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.20 0.30 V Base-Emitter Saturation Voltage VBE(SAT) 0.65 ⎯ 0.85 0.95 V Cobo Cibo hie hre hfe hoe fT ⎯ ⎯ 1.0 0.5 100 1.0 300 4.0 8.0 10 8.0 400 40 ⎯ pF pF kΩ -4 x 10 ⎯ μS MHz NF ⎯ 5.0 dB td tr ts tf ⎯ ⎯ ⎯ ⎯ 35 35 200 50 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: 4. Test Condition IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100μA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz VCC = 3.0V, IC = 10mA, VBE(off) = -0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA Measured under pulsed condition. Pulse width = 300μs. Duty cycle ≤2%. 1.0 PD, POWER DISSIPATION (W) NEW PRODUCT Electrical Characteristics 0.8 0.6 0.4 0.2 0 0 DS31141 Rev. 3 - 2 25 50 100 125 75 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 150 2 of 4 www.diodes.com DXT3904 © Diodes Incorporated TA = 150°C VCE = 1V NEW PRODUCT IC/IB = 10 T A = 85°C TA = 150°C TA = 25°C T A = 25°C TA = 85°C TA = -55°C TA = -55°C T A = -55°C TA = -55°C T A = 25°C TA = 25°C TA = 85°C TA = 85°C TA = 150°C TA = 150°C VCE = 1V IC/IB = 10 0 DS31141 Rev. 3 - 2 3 of 4 www.diodes.com DXT3904 © Diodes Incorporated Ordering Information (Note 5) Packaging SOT89-3L Device DXT3904-13 NEW PRODUCT Notes: 5. Shipping 2500/Tape & Reel For packaging details, go to our website at http://www.diodes.com/ap02007.pdf. Marking Information (Top View) K1N = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year ex: 7 = 2007 WW = Week code 01 - 52 YWW K1N Package Outline Dimensions 0 20 0. R D1 SOT89-3L C E H L B B1 8° e (4X ) A Dim Min Max Typ A 1.40 1.60 1.50 B 0.45 0.55 0.50 B1 0.37 0.47 0.42 C 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.50 1.70 1.60 E 2.40 2.60 2.50 e — — 1.50 H 3.95 4.25 4.10 L 0.90 1.20 1.05 All Dimensions in mm D Suggested Pad Layout 1.7 2.7 0.4 1.9 1.3 0.9 3.0 Unit: mm IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS31141 Rev. 3 - 2 4 of 4 www.diodes.com DXT3904 © Diodes Incorporated