“SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A (5K minimum) - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734 E C B PARTMARKING DETAIL – 634 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 120 V Collector-Emitter Voltage V CEO 100 V Emitter-Base Voltage V EBO 12 V Peak Pulse Current I CM 5 A Continuous Collector Current IC 900 mA Power Dissipation P tot 625 mW Operating and Storage Temperature Range T j:T stg -55 to +150 °C * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%. FMMT634 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO 120 170 V I C=100µA Collector-Emitter Breakdown Voltage V (BR)CEO 100 115 V I C=10mA* Emitter-Base Breakdown Voltage V (BR)EBO 12 16 V I E=100µA Collector Cut-Off Current I CBO 10 nA V CB=80V Emitter Cut-Off Current I EBO 10 nA V EB=7V Collector Emitter Cut-Off Current I CES 100 nA V CES=80V Collector-Emitter Saturation Voltage V CE(sat) 0.67 0.72 0.75 0.82 0.68 0.85 V V V V V I C=100mA, I B=1mA I C=250mA, I B=1mA I C=500mA, I B=5mA I C=900mA, I B=5mA I C=900mA, I B=5mA I C=1A, I B=5mA * Base-Emitter Saturation Voltage V BE(sat) 1.5 1.65 V I C=1A, I B=5mA * Base-Emitter Turn-On Voltage V BE(on) 1.33 1.5 V I C =1A, V CE=5V* Static Forward Current Transfer Ratio h FE Transition Frequency fT 140 Output Capacitance C obo 9 Turn-On Time t (on) Turn-Off Time t (off) 20K 15K 5K MAX. UNIT 0.75 0.80 0.85 0.93 — 0.96 CONDITIONS. * * * * *† I C=10mA, V CE=5V * I C=100mA, V CE=5V * I C=1A, V CE=5V * I C=2A, V CE=5V * I C=5A, V CE=5V * I C=1A, V CE=2V * 50K 60K 40K 14K 600 24K MHz I C=50mA, V CE=10V f=100MHz pF V CB=10V, f=1MHz 290 ns 2.4 µs I C=500mA V CC=20V I B=±1mA 20 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%. † Tj=150°C FMMT634 TYPICAL CHARACTERISTICS IC/IB=100 IC/IB=500 IC/IB=1000 IC/IB=5000 1.2 VCE(sat) -(V) 1.6 +25°C 0.8 0.4 0 -55°C +25°C +100°C 0.8 0.4 0 1mA 120K 90K 10mA 100mA 1A 10A 100mA IC-Collector Current VCE(sat) v IC VCE(sat) v IC VCE=5V 1.5 60K +25°C 30K 1A 10A 1A 10A IC/IB=500 2.0 +100°C -55°C +25°C +100°C 1.0 0.5 -55°C 0 1mA 0 10mA 100mA 1A 1mA 10A IC-Collector Current 1.8 100mA VBE(sat) v IC 10 VCE=5V IC-Collector Current (A) 1.5 1.2 0.9 -55°C +25°C +100°C 0.6 0.3 0 1mA 10mA IC-Collector Current hFE V IC VBE(on) - (V) 10mA 1mA IC-Collector Current VBE(sat) - (V) hFE - Typical Gain IC/IB=500 1.2 VCE(sat) -(V) 1.6 10mA 100mA IC-Collector Current VBE(on) v IC 1A 10A 1 0.1 0.01 0.001 0.1V DC 1s 100ms 10ms 1ms 100us 1V 10V VCE - Collector Emitter Voltage (V) Safe Operating Area 100V