SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” ISSUE 2 - October 1997 ZHCS750 ✪ FEATURES: * Low V F * High Current Capability 1 C 2 1 APPLICATIONS: * DC - DC converters * Mobile telecomms * PCMCIA PARTMARK DETAIL: ZS7 A 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Continuous Reverse Voltage VR 40 V Forward Current (Continuous) IF 750 mA Forward Voltage @ IF = 750mA VF 490 mV Average Peak Forward Current; D.C. = 50% IFAV 1500 mA Non Repetitive Forward Current t≤100µs t≤10ms IFSM 12 5.2 A A Power Dissipation at Tamb= 25° C Ptot 500 mW Storage Temperature Range Tstg -55 to + 150 °C Junction Temperature Tj 125 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Reverse Breakdown Voltage V (BR)R 40 60 V IR= 300µA Forward Voltage VF 225 235 290 340 390 440 530 280 310 350 420 490 540 650 mV mV mV mV mV mV mV IF= IF= IF= IF= IF= IF= IF= Reverse Current IR 50 100 µA V R= 30V Diode Capacitance CD 25 pF f= 1MHz,V R= 25V Reverse Recovery Time trr 12 ns switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed conditions. Pulse width= 300µs; duty cycle ≤2% . 50mA* 100mA* 250mA* 500mA* 750mA* 1000mA* 1500mA* ZHCS750 TYPICAL CHARACTERISTICS 100m IR - Reverse Current (A) IF - Forward Current (A) 10 1 0.1 +125°C +25°C -55°C Typical 10m +125°C 1m +100°C 100µ +50°C 10µ +25°C 1µ 100n -55°C 0.01 10n 0.2 VF - 0.4 0.6 0.8 Typical p I F(pk) DC tp 0.8 I F(av) =D x I F(pk) D=0.5 D=0.2 0.4 D=0.1 D=0.05 0 95 105 125 115 TC - Case Temperature (°C) IF(av) v TC 0.5 Typical Tj=125°C 0.4 0.3 t1 D=t1/t p I F(pk) 0.2 tp DC D=0.5 D=0.2 D=0.1 D=0.05 0.1 0 0 0.4 I F(av)=D x I F(pk) PF(av)=I F(av) x VF 0.8 1.2 IF(av) Average Forward Current (A) PF(av) v IF(av) 200 Typical Rth=100° C/W Rth=200°C/W Rth=300° C/W 100 75 1 10 VR - Reverse Voltage (V) Ta v VR 100 CD - Diode Capacitance (pF) 125 Ta - Ambient Temp (° C) 30 20 VR - Reverse Voltage (V) IR v VR D=t1/t t1 85 10 Forward Voltage (V) IF v VF 1.2 75 0 PF(av) Average Power Dissipation (mW) IF(av) Average Forward Current (A) 0 100 0 0 10 20 VR - Reverse Voltage (V) CD v VR 30 ZHCS750 TYPICAL CHARACTERISTICS MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.