ZVP3310A VGS=-20V -16V -12V -0.6 -9V -8V -0.4 -7V -6V -0.2 -5V -4.5V -4V -3.5V 0 0 -10 VGS= -20V -16V -14V -12V -10V -9V -0.6 -10V -20 -30 -40 ID - Drain Current (Amps) ID - Drain Current (Amps) TYPICAL CHARACTERISTICS -0.4 -6V -0.2 -5V -4V 0 -2 -4 -6 -8 -10 VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics ID= -0.3A -2 -0.15A ID - Drain Current (Amps) VDS-Drain Source Voltage (Volts) -10 -4 -0.075A -0.6 -2 -4 -6 -8 VDS= -10V -0.2 0 0 -10 VGS-Gate Source Voltage (Volts) -5V -6V -7V -8V -10V 50 -20V 10 -10 -100 -4 -6 -8 -10 Transfer Characteristics 2.6 Normalised RDS(on) and VGS(th) RDS(on)-Drain Source On Resistance (Ω) VGS=-4V -2 VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics 100 2.4 VGS=-10V ID=-150mA 2.2 ) on S( 2.0 1.8 ist es eR rc u So 1.6 1.4 1.0 0.8 0.6 RD ce an VGS=VDS ain Dr ID=-1mA Gate Thresh old Voltage VGS(TH) 1.2 -1000 -40 -20 0 20 40 60 80 100 120 140 160 180 Tj-Junction Temperature (°C) ID-Drain Current (mA) On-resistance v drain current D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -100 V Continuous Drain Current at Tamb=25°C ID -140 mA Pulsed Drain Current IDM -1.2 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 625 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -0.4 0 0 ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=20Ω -7V VDS - Drain Source Voltage (Volts) -6 ZVP3310A -8V -50 -8 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Normalised RDS(on) and VGS(th) v Temperature 3-433 PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -100 Gate-Source Threshold Voltage VGS(th) -1.5 MAX. UNIT CONDITIONS. V ID=-1mA, VGS=0V -3.5 V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -1 -50 µA µA VDS=-100V, VGS=0 VDS=-80V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) mA VDS=-25 V, VGS=-10V 20 Ω VGS=-10V,ID=-150mA mS VDS=-25V,ID=-150mA -300 Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) gfs 50 Input Capacitance (2) Ciss 50 pF Common Source Output Capacitance (2) Coss 15 pF Reverse Transfer Capacitance (2) Crss 5 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) td(off) 8 ns Fall Time (2)(3) tf 8 ns VDS=-25V, VGS=0V, f=1MHz VDD ≈ -25V, ID=-150mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-432 Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator ( 3 ) ZVP3310A VGS=-20V -16V -12V -0.6 -9V -8V -0.4 -7V -6V -0.2 -5V -4.5V -4V -3.5V 0 0 -10 VGS= -20V -16V -14V -12V -10V -9V -0.6 -10V -20 -30 -40 ID - Drain Current (Amps) ID - Drain Current (Amps) TYPICAL CHARACTERISTICS -0.4 -6V -0.2 -5V -4V 0 -2 -4 -6 -8 -10 VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics ID= -0.3A -2 -0.15A ID - Drain Current (Amps) VDS-Drain Source Voltage (Volts) -10 -4 -0.075A -0.6 -2 -4 -6 -8 VDS= -10V -0.2 0 0 -10 VGS-Gate Source Voltage (Volts) -5V -6V -7V -8V -10V 50 -20V 10 -10 -100 -4 -6 -8 -10 Transfer Characteristics 2.6 Normalised RDS(on) and VGS(th) RDS(on)-Drain Source On Resistance (Ω) VGS=-4V -2 VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics 100 2.4 VGS=-10V ID=-150mA 2.2 ) on S( 2.0 1.8 ist es eR rc u So 1.6 1.4 1.0 0.8 0.6 RD ce an VGS=VDS ain Dr ID=-1mA Gate Thresh old Voltage VGS(TH) 1.2 -1000 -40 -20 0 20 40 60 80 100 120 140 160 180 Tj-Junction Temperature (°C) ID-Drain Current (mA) On-resistance v drain current D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -100 V Continuous Drain Current at Tamb=25°C ID -140 mA Pulsed Drain Current IDM -1.2 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 625 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -0.4 0 0 ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=20Ω -7V VDS - Drain Source Voltage (Volts) -6 ZVP3310A -8V -50 -8 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Normalised RDS(on) and VGS(th) v Temperature 3-433 PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -100 Gate-Source Threshold Voltage VGS(th) -1.5 MAX. UNIT CONDITIONS. V ID=-1mA, VGS=0V -3.5 V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -1 -50 µA µA VDS=-100V, VGS=0 VDS=-80V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) mA VDS=-25 V, VGS=-10V 20 Ω VGS=-10V,ID=-150mA mS VDS=-25V,ID=-150mA -300 Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) gfs 50 Input Capacitance (2) Ciss 50 pF Common Source Output Capacitance (2) Coss 15 pF Reverse Transfer Capacitance (2) Crss 5 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) td(off) 8 ns Fall Time (2)(3) tf 8 ns VDS=-25V, VGS=0V, f=1MHz VDD ≈ -25V, ID=-150mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-432 Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator ( 3 ) ZVP3310A TYPICAL CHARACTERISTICS 100 gfs-Transconductance (mS) gfs-Transconductance (mS) 100 90 VDS=-10V 80 70 60 50 40 30 20 10 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 90 80 70 60 40 30 20 10 0 -0.8 0 -1 Transconductance v drain current 30 20 Ciss 10 Coss Crss 0 -20 -30 -40 -50 -60 -70 -80 VGS-Gate Source Voltage (Volts) C-Capacitance (pF) VGS=0V f=1MHz -10 -3 -4 -5 -6 -7 -8 -9 -10 Transconductance v gate-source voltage 50 0 -2 VGS-Gate Source Voltage (Volts) ID- Drain Current (Amps) 40 VDS=-10V 50 0 -2 -4 ID=- 0.2A VDS= -25V -50V -100V -6 -8 -10 -12 -14 -16 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3-434