UniFET-IITM FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET 600V, 3.8A, 2.5Ω Features • RDS(on) = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A Description • Low Gate Charge ( Typ. 8.3nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( Typ. 3.7pF) • Fast Switching This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant D G G D S TO-220 FDP Series TO-220F FDPF Series GD S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FDP4N60NZ FDPF4N60NZ 600 Units V ±25 V -Continuous (TC = 25oC) 3.8 3.8* -Continuous (TC = 100oC) 2.3 2.3* - Pulsed (Note 1) IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 3.8 A EAR Repetitive Avalanche Energy (Note 1) 8.9 mJ dv/dt Peak Diode Recovery dv/dt 15* (Note 2) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Derate above 25oC A 223.8 (Note 3) (TC = 25oC) PD TL 15 A mJ 10 V/ns 89 28 W 0.71 0.22 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP4N60NZ FDPF4N60NZ RθJC Thermal Resistance, Junction to Case 1.4 RθCS Thermal Resistance, Case to Sink Typ 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2011 Fairchild Semiconductor Corporation FDP4N60NZ / FDPF4N60NZ Rev.C0 1 Units 4.5 oC/W 62.5 www.fairchildsemi.com FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET December 2011 Device Marking FDP4N60NZ Device FDP4N60NZ Package TO-220 FDPF4N60NZ FDPF4N60NZ TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 600 - - V - 0.6 - V/oC μA Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V, TC = 25oC IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - - 1 VDS = 480V, VGS = 0V, TC = 125oC - - 10 IGSS Gate to Body Leakage Current VGS = ±25V, VDS = 0V - - ±10 3.0 - 5.0 V - 1.9 2.5 Ω - 3.3 - S ID = 250μA, Referenced to 25oC μA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 1.9A VDS = 20V, ID = 1.9A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 480V ID = 3.8A VGS = 10V (Note 4, 5) - 385 510 pF - 40 60 pF - 3.7 5 pF - 8.3 10.8 nC - 2.1 - nC - 3.3 - nC - 12.7 35.4 ns - 15.1 40.2 ns - 30.2 70.4 ns - 12.8 35.6 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 300V, ID = 3.8A RG = 25Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 3.8 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 15 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 3.8A - - 1.4 V trr Reverse Recovery Time - 168 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 3.8A dIF/dt = 100A/μs - 0.7 - μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 31mH, IAS = 3.8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 3.8A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP4N60NZ / FDPF4N60NZ Rev.C0 2 www.fairchildsemi.com FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 20 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V *Notes: 1. VDS = 20V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 10 10 1 o 150 C 1 o 25 C o -55 C 0.1 *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.02 0.1 1 10 VDS, Drain-Source Voltage[V] 0.1 30 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 40 IS, Reverse Drain Current [A] 4.0 3.5 3.0 VGS = 10V 2.5 VGS = 20V 2.0 10 o 150 C o 25 C 1 *Notes: 1. VGS = 0V o *Note: TC = 25 C 1.5 0.0 1.5 3.0 4.5 6.0 ID, Drain Current [A] 7.5 0.1 0.0 9.0 Figure 5. Capacitance Characteristics 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1.6 VGS, Gate-Source Voltage [V] 10 Ciss Capacitances [pF] 2. 250μs Pulse Test Figure 6. Gate Charge Characteristics 700 100 Coss 10 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 4.5 RDS(ON) [Ω], Drain-Source On-Resistance 4 6 VGS, Gate-Source Voltage[V] *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 1 10 VDS, Drain-Source Voltage [V] FDP4N60NZ / FDPF4N60NZ Rev.C0 VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 Crss 0 0.0 30 3 *Note: ID = 3.8A 1.5 3.0 4.5 6.0 7.5 Qg, Total Gate Charge [nC] 9.0 www.fairchildsemi.com FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -100 200 *Notes: 1. VGS = 10V 2. ID = 1.9A 0.5 Figure 9. Maximum Safe Operating Area vs. Case Temperature -50 0 50 100 150 o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current 30 4 10μs VGS = 10V 10 ID, Drain Current [A] 100μs ID, Drain Current [A] 200 1ms 1 10ms Operation in This Area is Limited by R DS(on) 0.1 DC *Notes: 3 2 1 o 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 VDS, Drain-Source Voltage [V] RθJC = 4.5 C/W 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Unclamped Inductive Switching Capability IAS, AVALANCHE CURRENT (A) 5 TJ = 25 oC TJ = 125 oC 1 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) FDP4N60NZ / FDPF4N60NZ Rev.C0 4 www.fairchildsemi.com FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET Typical Performance Characteristics (Continued) FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve 5 Thermal Response [ZθJC] 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 t2 0.01 *Notes: o Single pulse 0.01 -5 10 FDP4N60NZ / FDPF4N60NZ Rev.C0 1. ZθJC(t) = 4.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 5 10 2 10 www.fairchildsemi.com FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP4N60NZ / FDPF4N60NZ Rev.C0 6 www.fairchildsemi.com FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP4N60NZ / FDPF4N60NZ Rev.C0 7 www.fairchildsemi.com FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET Package Dimensions TO-220 Dimensions in Millimeters FDP4N60NZ / FDPF4N60NZ Rev.C0 8 www.fairchildsemi.com FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET Package Dimensions TO-220F * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters FDP4N60NZ / FDPF4N60NZ Rev.C0 9 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I60 FDP4N60NZ / FDPF4N60NZ Rev.C0 10 www.fairchildsemi.com FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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