DIODES ZXM62N03G

ZXM62N03G
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7A
DESCRIPTION
This new generation of High Density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power management
applications.
SOT223
FEATURES
· Low on-resistance
· Fast switching speed
· Low threshold
· Low gate drive
· SOT223 package
APPLICATIONS
· DC-DC Converters
· Audio Output Stage
· Relay and Soleniod driving
· Motor Control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXM62N03GTA
7”
12mm
1000 units
ZXM62N03GTC
13”
12mm
4000 units
Top View
DEVICE MARKING
· ZXM6
2N03
ISSUE 1 - OCTOBER 2002
1
ZXM62N03G
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
LIMIT
30
UNIT
V
Gate-Source Voltage
V GS
⫾20
V
Continuous Drain Current (V GS =10V; T A =25°C)(b)
(V GS =10V; T A =70°C)(b)
(V GS =10V; T A =25°C)(a)
ID
4.7
3.8
3.4
A
Pulsed Drain Current (c)
I DM
16
A
Continuous Source Current (Body Diode) (b)
IS
2.6
A
Pulsed Source Current (Body Diode)(c)
I SM
16
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
2.0
16
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
3.9
31
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
62.5
°C/W
Junction to Ambient (b)
R θJA
32
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
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ZXM62N03G
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ZXM62N03G
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
30
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
TYP.
MAX.
UNIT CONDITIONS.
STATIC
I D =250µA, V GS =0V
1
␮A
V DS =30V, V GS =0V
100
nA
1.0
Static Drain-Source On-State Resistance R DS(on)
(1)
Forward Transconductance (1)(3)
V
0.11
0.15
1.1
g fs
V GS =⫾20V, V DS =0V
V
I =250␮A, V DS = V GS
⍀
⍀
V GS =10V, I D =2.2A
V GS =4.5V, I D =1.1A
S
V DS =15V,I D =1.1A
D
DYNAMIC (3)
Input Capacitance
C iss
380
pF
Output Capacitance
C oss
90
pF
Reverse Transfer Capacitance
C rss
30
pF
Turn-On Delay Time
t d(on)
2.9
ns
Rise Time
tr
5.6
ns
Turn-Off Delay Time
t d(off)
11.7
ns
Fall Time
tf
6.4
ns
Total Gate Charge
Qg
9.6
nC
Gate-Source Charge
Q gs
1.7
nC
Gate-Drain Charge
Q gd
2.8
nC
Diode Forward Voltage (1)
V SD
0.95
V
T J =25⬚C, I S =2.2A,
V GS =0V
Reverse Recovery Time (3)
t rr
18.8
ns
T J =25⬚C, I F =2.2A,
di/dt= 100A/␮s
Reverse Recovery Charge (3)
Q rr
11.4
nC
V DS =25V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
V DD =15V, I D =2.2A
R G =6.0⍀, V GS =10V
V DS =24V,V GS =10V,
I D =2.2A
SOURCE-DRAIN DIODE
NOTES
(1) Measured under pulsed conditions. Width=300␮s. Duty cycle ⱕ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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ZXM62N03G
TYPICAL CHARACTERISTICS
100
100
+150°C
10V 8V 7V 6V
ID - Drain Current (A)
ID - Drain Current (A)
+25°C
VGS
5V
4.5V
10
4V
3.5V
1
3V
0.1
0.1
1
3V
1
0.1
10
100
Output Characteristics
Normalised RDS(on) and VGS(th)
T=150°C
T=25°C
1
2.5
3
3.5
4
4.5
5
5.5
6
6.5
1.6
1.4
RDS(on)
1.2
VGS=10V
ID=2.2A
1.0
VGS=VDS
ID=250uA
0.8
VGS(th)
0.6
0.4
-100
-50
0
100
50
150
200
VGS - Gate-Source Voltage (V)
Tj - Junction Temperature (°C)
Typical Transfer Characteristics
Normalised RDS(on) and VGS(th)
v Temperature
10
ISD - Reverse Drain Current (A)
ID - Drain Current (A)
RDS(on) - Drain-Source On-Resistance (W )
1
Output Characteristics
10
1
VGS=3V
VGS=4.5V
0.1
VGS=10V
0.01
4.5V
4V
VDS - Drain-Source Voltage (V)
VDS=10V
2
5V
VDS - Drain-Source Voltage (V)
100
0.1
VGS
3.5V
0.1
100
10
10V 8V 7V 6V
10
1
0.1
10
100
100
10
1
T=150°C
T=25°C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID - Drain Current (A)
VSD - Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
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ZXM62N03G
TYPICAL CHARACTERISTICS
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
900
Vgs=0V
f=1Mhz
800
700
Ciss
Coss
Crss
600
500
400
300
200
100
0
0.1
1
10
100
5
ID=2.2A
4.5
4
3.5
VDS=16V
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
6
VDS - Drain Source Voltage (V)
Q -Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Basic Gate Charge Waveform
Gate Charge Test Circuit
Switching Time Waveforms
Switching Time Test Circuit
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ZXM62N03G
PACKAGE OUTLINE
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
Min
Max
Min
Max
A
6.3
6.7
0.248
0.264
B
3.3
3.7
0.130
0.146
C
-
1.7
-
0.067
D
0.6
0.8
0.024
0.031
E
2.9
3.1
0.114
0.122
F
0.24
0.32
0.009
0.13
G
NOM 4.6
NOM 0.181
H
0.85
1.05
0.033
0.041
K
0.02
0.10
0.0008
0.004
L
6.7
7.3
0.264
0.287
M
NOM 2.3
NOM 0.0905
PAD LAYOUT DETAILS
4.6
2.0 min
(3x)
2.3
1.5 min
(3x)
6.8
2.0 min
3.8 min
© Zetex plc 2002
Americas
Asia Pacific
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Zetex Inc
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Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
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Telephone: (631) 360 2222
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Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Europe
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
uk.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
www.zetex.com
ISSUE 1 - OCTOBER 2002
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