DIODES ZXMC4A16DN8TC

ZXMC4A16DN8
COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel = V(BR)DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A
P-Channel = V(BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7A
DESCRIPTION
This new generation of trench MOSFETs from Zetex
utilises a unique structure that combines the benefits
of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage,
power management applications.
SO8
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Motor drive
• LCD backlighting
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE WIDTH
QUANTITY PER
REEL
ZXMC4A16DN8TA
7”
12mm
500
ZXMC4A16DN8TC
13”
12mm
2,500
PINOUT
DEVICE MARKING
• ZXMC
4A16
TOP VIEW
ISSUE 1 - NOVEMBER 2004
1
SEMICONDUCTORS
ZXMC4A16DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
N-channel
P-channe|
UNIT
Drain-source voltage
V DSS
40
-40
V
Gate-source voltage
V GS
⫾20
⫾20
V
Continuous drain current
ID
(V GS = 10V; T A =25°C) (b)(d)
5.2
-4.7
A
(V GS = 10V; T A =70°C) (b)(d)
(V GS = 10V; T A =25°C) (a)(d)
4.1
-3.8
A
4.0
-3.6
A
I DM
24
-23
A
Pulsed drain current
(c)
(b)
IS
2.5
2.3
A
Pulsed source current (body diode) (c)
I SM
24
23
A
Power dissipation at T A =25°C (a) (d)
Linear derating factor
PD
Power dissipation at T A =25°C (a) (e)
PD
Continuous source current (body diode)
Linear derating factor
Power dissipation at T A =25°C (b) (d)
PD
Linear derating factor
Operating and storage temperature range
T j , T stg
1.25
W
10
mW/°C
1.8
W
14
mW/°C
2.1
W
17
mW/°C
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a) (d)
Junction to ambient (a) (e)
(b) (d)
Junction to ambient
Junction to ambient
VALUE
UNIT
R ⍜JA
100
°C/W
R ⍜JA
70
°C/W
R ⍜JA
60
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300us, d<= 0.02. Refer to Transient Thermal Impedance
graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - NOVEMBER 2004
SEMICONDUCTORS
2
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
3
SEMICONDUCTORS
ZXMC4A16DN8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
V (BR)DSS
40
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
I D = 250␮A, V GS =0V
Zero Gate Voltage Drain Current
I DSS
0.5
␮A
V DS =40V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS =±20V, V DS =0V
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
1.0
V GS(th)
(1)
V
R DS(on)
0.050
⍀
V GS = 10V, I D = 4.5A
V GS = 4.5V, I D = 3.2A
0.075
Forward Transconductance (1) (3)
I D = 250mA, V DS =V GS
g fs
8.6
S
V DS = 15V, I D = 4.5A
Input Capacitance
Ciss
770
pF
Output Capacitance
Coss
92
pF
Reverse Transfer Capacitance
Crss
61
pF
Turn-On-Delay Time
td(on)
3.3
ns
Rise Time
tr
4.7
ns
Turn-Off Delay Time
td(off)
29
ns
Fall Time
tf
14
ns
Total Gate Charge
Qg
17
nC
Gate-Source Charge
Qgs
2.5
nC
Gate Drain Charge
Qgd
3.8
nC
VSD
0.8
trr
20
ns
T j =25°C, I S = 2.5A,
Qrr
16
nC
di/dt=100A/␮s
DYNAMIC (3)
SWITCHING
V DS = 40V, V GS =0V
f=1MHz
(2) (3)
V DD = 30V, I D = 1A
R G ≅6.0⍀, V GS = 10V
V DS = 30V, V GS = 10V
I D = 4.5A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
0.95
V
T j =25°C, I S = 4.5A,
V GS =0V
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - NOVEMBER 2004
SEMICONDUCTORS
4
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
5
SEMICONDUCTORS
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
SEMICONDUCTORS
6
ZXMC4A16DN8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
V (BR)DSS
-40
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
I D = -250␮A, V GS =0V
Zero Gate Voltage Drain Current
I DSS
-1.0
␮A
V DS = -40V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS =±20V, V DS =0V
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
-1.0
V GS(th)
(1)
V
R DS(on)
0.060
⍀
VGS = -10V, ID = -3.8A
V GS = -4.5V, ID = -2.9A
0.100
Forward Transconductance (1) (3)
ID = -250␮A, VDS =VGS
g fs
6.8
S
Input Capacitance
C iss
1000
pF
Output Capacitance
C oss
180
pF
Reverse Transfer Capacitance
C rss
160
pF
Turn-On-Delay Time
t d(on)
3.7
ns
VDS = -15V, ID = -3.8A
DYNAMIC (3)
SWITCHING
V DS = -20V, V GS =0V
f=1MHz
(2) (3)
Rise Time
tr
5.5
ns
V DD = -20V, I D = -1A
Turn-Off Delay Time
t d(off)
33
ns
R G ≅ 6.0⍀, V GS = 10V
Fall Time
tf
18
ns
Gate Charge
Qg
15
nC
Total Gate Charge
Qg
26
nC
Gate-Source Charge
Q gs
3.2
nC
Gate Drain Charge
Q gd
7.3
nC
V SD
-0.86
V DS = -20V, V GS = -5V
I D = -3.8A
VDS= -20V, VGS= -10V
I D = -3.8A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
-0.95
V
T j =25°C, I S = -3.4A,
V GS =0V
T j =25°C, I S = -3A,
di/dt=100A/␮s
t rr
27
ns
Q rr
25
nC
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - NOVEMBER 2004
7
SEMICONDUCTORS
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
SEMICONDUCTORS
8
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
9
SEMICONDUCTORS
ZXMC4A16DN8
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
e
A1
0.10
0.25
0.004
0.010
b
0.33
0.51
0.013
0.020
D
4.80
5.00
0.189
0.197
c
0.19
0.25
0.008
0.010
H
5.80
6.20
0.228
0.244
⍜
0°
8°
0°
8°
E
3.80
4.00
0.150
0.157
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
-
-
-
-
-
1.27 BSC
Min
Max
0.050 BSC
© Zetex Semiconductors plc 2004
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Lansdowne Road, Chadderton
Oldham, OL9 9TY
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - NOVEMBER 2004
SEMICONDUCTORS
10
SCXXXX####DS#