DIODES ZXMN0545G4TA

ZXMN0545G4
450V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mA
DESCRIPTION
This 450V enhancement mode N-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
FEATURES
SOT223
• High voltage
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• SOT223 package variant engineered to increase spacing between
high voltage pins
APPLICATIONS
• Off-line power supply start-up circuitry
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXMN0545G4TA
7
12mm embossed
1,000 units
ZXMN0545G4TC
13
12mm embossed
4,000 units
DEVICE MARKING
N/C
PINOUT - TOP VIEW
ZXMN
0545
ISSUE 1 - JANUARY 2006
1
ZXMN0545G4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V DS
450
V
V GS
⫾20
V
ID
140
mA
I DM
600
mA
Continuous Source Current (Body Diode) (b)
IS
140
A
Pulsed Source Current (Body Diode) (c)
I SM
600
A
Power Dissipation at T amb =25°C (a)
Linear derating factor
P tot
2.0
W
1.6
mW/°C
Gate Source Voltage
Continuous Drain Current (VGS =10V; Tamb =25°C)
Pulsed Drain Current
(a)
(c)
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R θJA
62.5
°C/W
Junction to Ambient (b)
R θJA
32
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tⱕ5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 1 - JANUARY 2006
2
ZXMN0545G4
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source
Breakdown Voltage
BV DSS
450
Gate-Source Threshold
Voltage
V GS(th)
1
Gate-Body Leakage
MAX.
UNIT
CONDITIONS
V
I D =1mA, V GS =0V
3
V
I =1mA, V DS = V GS
D
I GSS
20
nA
V GS = ⫾20V, V DS =0V
Zero Gate Voltage Drain
Current
I DSS
10
400
µA
µA
V DS =450 V, V GS =0V
V DS =405 V, V GS =0V,
T=125°C (2)
On-State Drain Current (1)
I D(on)
mA
V DS =25 V, V GS =10V
Static Drain-Source On-State
Resistance (1)
R DS(on)
Ω
V GS =10V, I D =100mA
mS
V DS =25V, I D =100mA
Forward Transconductance (1)(2) g fs
Input Capacitance
(2)
150
50
100
C iss
70
pF
Common Source Output
Capacitance (2)
C oss
10
pF
Reverse Transfer Capacitance (2)
C rss
4
pF
t d(on)
7
ns
tr
7
ns
t d(off)
16
ns
tf
10
ns
Turn-On Delay Time
Rise Time
(2)(3)
Turn-Off Delay Time
Fall Time
(2)(3)
(2)(3)
(2)(3)
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ⱕ2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ISSUE 1 - JANUARY 2006
3
V DS =25V, V GS =0V, f=1MHz
V DD =25V, I D =100mA
ZXMN0545G4
800
400
600
ID(On)Drain Current (mA)
VGS=
10V
8V
6V
700
5V
500
400
300
4V
200
100
3V
VGS=
10V
6V
5V
300
4V
200
100
3V
0
0
0
10
20
30
40
50
60
70
80
90
100
0
12
16
20
VDS - Drain Source Voltage (Volts)
Output characteristics
Saturation characteristics
20
500
16
ID=
250mA
12
8
4
0
100mA
50mA
VDS=
25V
400
300
200
100
0
2
6
4
8
10
0
VGS-Gate Source Voltage (Volts)
1
2
3
4
5
6
7
8
9
10
VGS-Gate Source Voltage (Volts)
Transfer characteristics
Voltage saturation characteristics
2.4
100
90
80
70
60
Normalised RDS(on) and VGS(th)
RDS(ON) -Drain Source Resistance ( )
8
4
VDS - Drain Source Voltage (Volts)
ID(On) Drain Current (mA)
VDS-Drain Source Voltage (Volts)
ID(On) On-State Drain Current (mA)
TYPICAL CHARACTERISTICS
ID=
250mA
50
40
100mA
50mA
30
20
10
1
2
3
4
5 6 7 8 9 10
)
on
S(
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
e
rc
ou
-S
n
ai
Dr
Gate T
hre
ce
an
st
si
e
R
RD
VGS=10V
ID=0.1A
VGS=VDS
ID=1mA
shold V
oltage
V GS(t
h)
0.4
-80 -60 -40 -20 0 20 40 60 80 100 120 140 160
20
Tj-Junction Temperature (C )
VGS-Gate Source Voltage (Volts)
On-resistance vs gate-source voltage
Normalised RDS(on) and VGS(th) temperature
ISSUE 1 - JANUARY 2006
4
ZXMN0545G4
TYPICAL CHARACTERISTICS
ISSUE 1 - JANUARY 2006
5
ZXMN0545G4
PACKAGE OUTLINE
PAD LAYOUT DETAILS
3.8
0.15
2.0
0.079
6.3
0.248
2.0
0.079
1.5
0.059
2.3
0.091
mm
inches
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
D
6.30
6.70
0.248
0.264
-
-
-
-
-
© Zetex Semiconductors plc 2006
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United Kingdom
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Fax: (49) 89 45 49 49 49
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Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
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Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
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Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - JANUARY 2006
6