ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. FEATURES SOT223 • High voltage • Low on-resistance • Fast switching speed • Low gate drive • Low threshold • SOT223 package variant engineered to increase spacing between high voltage pins APPLICATIONS • Off-line power supply start-up circuitry ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXMN0545G4TA 7 12mm embossed 1,000 units ZXMN0545G4TC 13 12mm embossed 4,000 units DEVICE MARKING N/C PINOUT - TOP VIEW ZXMN 0545 ISSUE 1 - JANUARY 2006 1 ZXMN0545G4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 450 V V GS ⫾20 V ID 140 mA I DM 600 mA Continuous Source Current (Body Diode) (b) IS 140 A Pulsed Source Current (Body Diode) (c) I SM 600 A Power Dissipation at T amb =25°C (a) Linear derating factor P tot 2.0 W 1.6 mW/°C Gate Source Voltage Continuous Drain Current (VGS =10V; Tamb =25°C) Pulsed Drain Current (a) (c) THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 62.5 °C/W Junction to Ambient (b) R θJA 32 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at tⱕ5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 1 - JANUARY 2006 2 ZXMN0545G4 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 450 Gate-Source Threshold Voltage V GS(th) 1 Gate-Body Leakage MAX. UNIT CONDITIONS V I D =1mA, V GS =0V 3 V I =1mA, V DS = V GS D I GSS 20 nA V GS = ⫾20V, V DS =0V Zero Gate Voltage Drain Current I DSS 10 400 µA µA V DS =450 V, V GS =0V V DS =405 V, V GS =0V, T=125°C (2) On-State Drain Current (1) I D(on) mA V DS =25 V, V GS =10V Static Drain-Source On-State Resistance (1) R DS(on) Ω V GS =10V, I D =100mA mS V DS =25V, I D =100mA Forward Transconductance (1)(2) g fs Input Capacitance (2) 150 50 100 C iss 70 pF Common Source Output Capacitance (2) C oss 10 pF Reverse Transfer Capacitance (2) C rss 4 pF t d(on) 7 ns tr 7 ns t d(off) 16 ns tf 10 ns Turn-On Delay Time Rise Time (2)(3) Turn-Off Delay Time Fall Time (2)(3) (2)(3) (2)(3) (1) Measured under pulsed conditions. Width=300µs. Duty cycle ⱕ2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator ISSUE 1 - JANUARY 2006 3 V DS =25V, V GS =0V, f=1MHz V DD =25V, I D =100mA ZXMN0545G4 800 400 600 ID(On)Drain Current (mA) VGS= 10V 8V 6V 700 5V 500 400 300 4V 200 100 3V VGS= 10V 6V 5V 300 4V 200 100 3V 0 0 0 10 20 30 40 50 60 70 80 90 100 0 12 16 20 VDS - Drain Source Voltage (Volts) Output characteristics Saturation characteristics 20 500 16 ID= 250mA 12 8 4 0 100mA 50mA VDS= 25V 400 300 200 100 0 2 6 4 8 10 0 VGS-Gate Source Voltage (Volts) 1 2 3 4 5 6 7 8 9 10 VGS-Gate Source Voltage (Volts) Transfer characteristics Voltage saturation characteristics 2.4 100 90 80 70 60 Normalised RDS(on) and VGS(th) RDS(ON) -Drain Source Resistance ( ) 8 4 VDS - Drain Source Voltage (Volts) ID(On) Drain Current (mA) VDS-Drain Source Voltage (Volts) ID(On) On-State Drain Current (mA) TYPICAL CHARACTERISTICS ID= 250mA 50 40 100mA 50mA 30 20 10 1 2 3 4 5 6 7 8 9 10 ) on S( 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 e rc ou -S n ai Dr Gate T hre ce an st si e R RD VGS=10V ID=0.1A VGS=VDS ID=1mA shold V oltage V GS(t h) 0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 20 Tj-Junction Temperature (C ) VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) temperature ISSUE 1 - JANUARY 2006 4 ZXMN0545G4 TYPICAL CHARACTERISTICS ISSUE 1 - JANUARY 2006 5 ZXMN0545G4 PACKAGE OUTLINE PAD LAYOUT DETAILS 3.8 0.15 2.0 0.079 6.3 0.248 2.0 0.079 1.5 0.059 2.3 0.091 mm inches Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - © Zetex Semiconductors plc 2006 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 1 - JANUARY 2006 6