SGH15N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. • • • • • Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 15A High input impedance CO-PAK, IGBT with FRD : trr = 42ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-3P E G C E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGH15N60RUFD 600 ± 20 24 15 45 15 160 10 160 64 -55 to +150 -55 to +150 Units V V A A A A A us W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©2002 Fairchild Semiconductor Corporation Typ. ---- Max. 0.77 0.7 40 Units °C/W °C/W °C/W SGH15N60RUFD Rev. A1 SGH15N60RUFD IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA IC = 15mA, VCE = VGE IC = 15A, VGE = 15V IC = 24A, VGE = 15V 5.0 --- 6.0 2.2 2.5 8.5 2.8 -- V V V ---- 948 101 33 ---- pF pF pF --------------- 17 33 44 118 320 356 676 20 34 48 212 340 695 1035 --65 200 --950 --70 350 --1450 ns ns nS ns uJ uJ uJ ns ns ns ns uJ uJ uJ Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Le Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300 V, IC = 15A, RG = 13Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 15A, RG = 13Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 300 V, VGE = 15V 100°C VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge ©2002 Fairchild Semiconductor Corporation -- us 42 7 17 14 60 10 24 -- nC nC nC nH Min. -- Typ. 1.4 Max. 1.7 Units -- 1.3 -- TC = 25°C -- 42 60 TC = 100°C -- 60 -- TC = 25°C -- 3.5 6.0 TC = 100°C -- 5.6 -- TC = 25°C -- 80 180 TC = 100°C -- 220 -- Measured 5mm from PKG C Parameter -- ----- VCE = 300 V, IC = 15A, VGE = 15V Electrical Characteristics of DIODE T Symbol 10 @ TC = = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 15A TC = 100°C IF= 15A, di/dt = 200 A/us V ns A nC SGH15N60RUFD Rev. A1 SGH15N60RUFD Electrical Characteristics of the IGBT T 45 20V Common Emitter T C = 25℃ 45 15V 12V Collector Current, IC [A] Collector Current, IC [A] 35 30 VGE = 10V 25 Common Emitter VGE = 15V TC = 25℃ ━━ TC = 125℃ ------ 40 40 20 15 35 30 25 20 15 10 10 5 5 0 0 0 2 4 6 8 1 Collector - Emitter Voltage, VCE [V] Fig 2. Typical Saturation Voltage Characteristics 24 4.0 V CC = 300V Load Current : peak of square wave Common Emitter V GE = 15V 3.5 20 30A Load Current [A] Collector - Emitter Voltage, VCE [V] 10 Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics 3.0 2.5 15A 2.0 16 12 8 IC = 8A 1.5 4 1.0 Duty cycle : 50% T C = 100℃ Power Dissipation = 25W 0 -50 0 50 100 150 0.1 1 Case Temperature, T C [℃] 10 100 1000 Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Collector - Emitter Voltage, V CE [V] Common Emitter TC = 25℃ Collector - Emitter Voltage, V CE [V] SGH15N60RUFD 50 16 12 8 30A 4 15A Common Emitter T C = 125℃ 16 12 8 30A 4 15A IC = 7A IC = 7A 0 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Fig 6. Saturation Voltage vs. VGE SGH15N60RUFD Rev. A1 Common Emitter VGE = 0V, f = 1MHz TC = 25℃ Common Emitter V CC = 300V, V GE = ± 15V IC = 15A T C = 25℃ ━━ T C = 125℃ ------ Cies Switching Time [ns] Capacitance [pF] 1500 1200 900 Coes 600 Ton 100 Tr Cres 300 10 0 1 1 10 10 Fig 8. Turn-On Characteristics vs. Gate Resistance Fig 7. Capacitance Characteristics 1000 Common Emitter V CC = 300V, VGE = ± 15V IC = 15A T C = 25℃ ━━ T C = 125℃ ------ Common Emitter V CC = 300V, VGE = ± 15V IC = 15A T C = 25℃ ━━ T C = 125℃ -----Toff Toff Tf Switching Loss [uJ] Switching Time [ns] 100 Gate Resistance, R G [Ω ] Collector - Emitter Voltage, VCE [V] 1000 Eoff Eon Eoff Tf 100 100 1 10 1 100 10 100 Gate Resistance, RG [Ω ] Gate Resistance, R G [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter V GE = ± 15V, RG = 13Ω T C = 25℃ ━━ T C = 125℃ ------ Ton Switching Time [ns] Switching Time [ns] Common Emitter V GE = ± 15V, RG = 13 Ω T C = 25℃ ━━ T C = 125℃ -----100 Tr Toff Tf Toff 100 Tf 10 5 10 15 20 25 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation 30 5 10 15 20 25 30 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current SGH15N60RUFD Rev. A1 SGH15N60RUFD 1800 Gate - Emitter Voltage, VGE [ V ] Switching Loss [uJ] Eoff 1000 Eoff Eon SGH15N60RUFD 15 Common Emitter V GE = ± 15V, RG = 13 Ω T C = 25℃ ━━ T C = 125℃ ------ Common Emitter R L = 20 Ω T C = 25℃ 12 300 V VCC = 100 V 200 V 9 6 3 0 100 5 10 15 20 25 30 0 10 Collector Current, IC [A] 20 30 40 50 Gate Charge, Q g [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 100 100 IC MAX. (Pulsed) 50us Collector Current, IC [A] Collector Current, IC [A] 100us IC MAX. (Continuous) 1㎳ 10 DC Operation 1 Single Nonrepetitive Pulse T C = 25℃ Curves must be derated linearly with increase in temperature 10 Safe Operating Area VGE = 20V, TC = 100℃ 1 0.1 0.1 1 10 100 1 1000 10 1000 Fig 16. Turn-Off SOA Characteristics Fig 15. SOA Characteristics Thermal Response, Zthjc [℃/W] 100 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [V] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Pdm 0.01 t1 t2 single pulse Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1E-3 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGH15N60RUFD Rev. A1 Reverse Recovery Current, Irr [A] Forward Current, IF [A] 100 10 1 0 1 2 VR = 200V IF = 15A TC = 25℃ ━━ TC = 100℃ ------ 10 1 100 3 1000 di/dt [A/us] Forward Voltage Drop, V FM [V] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 120 800 V R = 200V IF = 15A T C = 25℃ ━━ T C = 100℃ ------ 600 Reverce Recovery Time, t rr [ns] Stored Recovery Charge, Qrr [nC] SGH15N60RUFD 100 T C = 25℃ ━━ T C = 100℃ ------ 400 200 V R = 200V IF = 15A T C = 25℃ ━━ T C = 100℃ ------ 100 80 60 40 20 0 100 1000 di/dt [A/us] Fig 20. Stored Charge ©2002 Fairchild Semiconductor Corporation 100 1000 di/dt [A/us] Fig 21. Reverse Recovery Time SGH15N60RUFD Rev. A1 TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGH15N60RUFD Rev. A1 SGH15N60RUFD Package Dimension TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. H5