DIODES ZXMN2088DE6TA

Part no.
ZXMN2088DE6
20V Dual SOT23-6 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
V(BR)DSS
20
RDS(on) (Ω)
ID (A)
0.200 @ VGS= 4.5V
2.1
0.240 @ VGS= 2.5V
1.9
0.310 @ VGS= 1.8V
1.7
Description
This new generation dual n-channel trench MOSFET from Zetex features low on-resistance
achievable with low gate drive.
Features
•
Low on-resistance
•
Low gate drive capability
•
SOT23-6 (dual) package
Applications
•
Power Management functions
•
Disconnect switches
•
Relay driving and load switching
Ordering information
Device
ZXMN2088DE6TA
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
8
3,000
G1
S2
G2
D1
S1
D2
Pinout – top view
Device marking
2088
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ZXMN2088DE6
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-Source voltage
VDSS
20
V
Gate-Source voltage
VGS
±8
V
ID
2.1
A
Continuous Drain current @ VGS= 4.5V; TA=25°C
(b) (d)
@ VGS= 4.5V; TA=70°C
(b) (d)
1.7
@ VGS= 4.5V; TA=25°C
(a) (d)
1.7
Pulsed Drain current (c)
IDM
8
A
Power dissipation at TA =25°C (a) (d)
PD
0.9
W
7.2
mW/°C
1.1
W
8.8
mW/°C
1.3
W
10.4
mW/°C
-55 to +150
°C
Linear derating factor
Power dissipation at TA =25°C
(a) (e)
PD
Linear derating factor
Power dissipation at TA =25°C
(b) (d)
PD
Linear derating factor
Operating and storage temperature range
Tj, Tstg
Thermal resistance
Parameter
Symbol
Value
Unit
Junction to Ambient (a) (d)
RθJA
139
°C/W
Junction to Ambient (a) (e)
RθJA
113
°C/W
Junction to Ambient (b) (d)
RθJA
96
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) As above measured at t ≤ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum
junction temperature.
(d) For device with one active die
(e) For device with two active die running at equal power.
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ZXMN2088DE6
Thermal Characteristics
10
1.2
Max Power Dissipation (W)
ID Drain Current (A)
RDS(on)
Limited
1
DC
1s
100m
10m
100ms
10ms
Single Pulse
T amb=25°C
1ms
100µs
1 Die Active (a)(d)
1
10
VDS Drain-Source Voltage (V)
2 Die Active (a)(e)
1.0
0.8
0.6
1 Die Active (a)(d)
0.4
0.2
0.0
0
20
Safe Operating Area
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
120
T amb=25°C
Maximum Power (W)
Thermal Resistance (°C/W)
140
100
80
D=0.5
1 Die Active (a)(d)
60
40
D=0.2
D=0.1
D=0.05
20
0
100µ
Single Pulse
1m
10m 100m
1
Pulse Width (s)
10
100
1k
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Single Pulse
T amb=25°C
1 Die Active (a)(d)
10
1
100µ
Transient Thermal Impedance
Issue 2 – June 2008
100
1m
10m 100m
1
10
Pulse Width (s)
100
1k
Pulse Power Dissipation
3
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ZXMN2088DE6
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Parameter
Symbol
Min.
Drain-Source breakdown
voltage
V(BR)DSS
20
Zero gate voltage drain current
IDSS
Zero gate voltage drain current
Typ.
Max.
Unit
Conditions
Static
V
ID= 250μA, VGS=0V
100
nA
VDS= 3V, VGS=0V
IDSS
1
μA
VDS= 20V, VGS=0V
Gate-Body leakage
IGSS
100
nA
VGS=±8V, VDS=0V
Gate-Source threshold voltage
VGS(th)
1.0
V
ID= 250μA, VDS=VGS
Static Drain-Source on-state
resistance (*)
RDS(on)
112
0.200
Ω
VGS= 4.5V, ID= 1.0A
137
0.240
Ω
VGS= 2.5V, ID= 0.6A
165
0.310
Ω
VGS= 1.8V, ID= 0.3A
Forward transconductance (*) (‡)
0.4
gfs
4.6
S
VDS= 10V, ID= 1.0A
Input capacitance
Ciss
279
pF
VDS= 10V, VGS=0V
Output capacitance
Coss
52
pF
f=1MHz
Reverse transfer capacitance
Crss
29
pF
Turn-on-delay time
td(on)
2
ns
VDD= 10V,VGS=4.5V
Rise time
tr
3.2
ns
ID= 1A
Turn-off delay time
td(off)
12.7
ns
RG ≈ 6.0Ω
Fall time
tf
6.2
ns
Total Gate charge
Qg
3.8
nC
VDS= 10V,
Gate-Source charge
Qgs
0.41
nC
VGS= 4.5V
Gate Drain charge
Qgd
0.56
nC
ID= 2.4A
Diode forward voltage (‡)
VSD
0.75
Reverse recovery time
trr
Reverse recovery charge
Qrr
Dynamic
(‡)
Switching
(†) (‡)
Gate Charge
Source-drain diode
0.95
V
Tj=25°C, IS= 1.0A,
VGS=0V
6.6
ns
Tj = 25°C,
1.6
nC
IF = 1.24A
di/dt = 100A/µs
NOTES:
( )
* Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.
(†)
Switching characteristics are independent of operating junction temperature.
(‡)
For design aid only, not subject to production testing.
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ZXMN2088DE6
Typical Characteristics
10V
4.5V
10
2.5V
2V
1.5V
1
1V
VGS
0.1
0.1
1
1
1V
VGS
0.1
0.5V
VDS Drain-Source Voltage (V)
0.1
1
Output Characteristics
ID Drain Current (A)
1
T = 150°C
T = 25°C
1E-3
0.4
0.6
0.8
1.0
VGS Gate-Source Voltage (V)
1.2
VGS = 4.5V
1.4
ID = 1A
1.2
RDS(on)
1.0
0.8
VGS(th)
0.6
VGS = VDS
0.4
ID = 250uA
0.2
-50
0
50
100
150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
Typical Transfer Characteristics
1
VGS
1V
ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
Normalised RDS(on) and VGS(th)
1.6
VDS = 10V
0.01
10
VDS Drain-Source Voltage (V)
Output Characteristics
0.1
2.5V
1.5V
0.01
10
4.5V
10V
T = 150°C
2V
ID Drain Current (A)
ID Drain Current (A)
T = 25°C
10
1.5V
T = 25°C
2V
2.5V
3V
3.5V
4.5V
10V
0.1
0.1
1
10
ID Drain Current (A)
© Diodes Incorporated 2008
T = 150°C
1
T = 25°C
0.1
VGS = -3V
0.01
0.2
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
Issue 2 – June 2008
10
5
1.4
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CISS
400
VGS = 0V
VGS Gate-Source Voltage (V)
C Capacitance (pF)
ZXMN2088DE6
f = 1MHz
COSS
200
CRSS
0
0.1
1
10
ID = 1A
4
3
2
1
0
VDS = 10V
0
1
2
3
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
4
Test Circuits
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ZXMN2088DE6
Packaging details – SOT236
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ZXMN2088DE6
Definitions
Product change
Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.
Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s
application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc
with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or
otherwise. Diodes Inc does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence),
breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of
these circuit applications, under any circumstances.
Life support
Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
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For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
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To ensure quality of service and products we strongly advise the purchase of parts directly from Diodes or one of our regionally authorized
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Diodes Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales
channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
being affected should be replaced.
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Diodes Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding
regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the
use of hazardous substances and/or emissions.
All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE
and ELV directives.
Product status key:
“Preview”
“Active”
“Last time buy (LTB)”
“Not recommended for new designs”
“Obsolete”
Datasheet status key:
“Draft version”
“Provisional version”
“Issue”
Future device intended for production at some point. Samples may be available
Product status recommended for new designs
Device will be discontinued and last time buy period and delivery is in effect
Device is still in production to support existing designs and production
Production has been discontinued
This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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