DIODES ZXMN3G32DN8TA

ZXMN3G32DN8
30V SO8 dual N-channel enhancement mode MOSFET
Summary
V(BR)DSS
RDS(on) (Ω)
ID (A)
30
0.028 @ VGS= 10V
7.1
0.045 @ VGS= 4.5V
5.6
Description
This new generation Trench MOSFET from Zetex features low onresistance and fast switching speed.
Features
D1
•
Low on-resistance
•
4.5V gate drive capability
•
Fast switching bullet
G1
Applications
DC-DC Converters
•
Power management functions
•
Motor Control
•
Backlighting
Ordering information
DEVICE
ZXMN3G32DN8TA
G2
S1
•
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
500
D2
S2
S1
D1
G1
D1
S2
D2
G2
D2
Device marking
ZXMN
3G32D
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ZXMN3G32DN8
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain source voltage
VDSS
30
V
Gate source voltage
VGS
±20
V
ID
7.1
5.7
5.5
A
A
A
IDM
33.6
A
IS
3.1
A
Pulsed source current (body diode)(c)
ISM
33.6
A
Power dissipation at TA =25°C(a)(d)
PD
1.25
W
10
mW/°C
1.8
W
14
mW/°C
2.1
W
17
mW/°C
Tj, Tstg
-55 to 150
°C
Continous Drain Current @ VGS=10; TA=25°C(b)
@ VGS=10; TA=70°C(b)
@ VGS=10; TA=25°C(a)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Linear derating factor
PD
Power dissipation at TA =25°C(a)(e)
Linear derating factor
PD
Power dissipation at TA =25°C(b)(d)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to
ambient(a)(d)
R⍜JA
100
°C/W
Junction to
ambient(a)(e)
R⍜JA
70
°C/W
Junction to ambient(b)(d)
R⍜JA
60
°C/W
Junction to lead(f)
R⍜JL
51
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at end of drain lead).
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ZXMN3G32DN8
Thermal characteristics
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ZXMN3G32DN8
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Drain-Source Breakdown
Voltage
V(BR)DSS
30
Zero Gate Voltage Drain
Current
IDSS
Gate-Body Leakage
IGSS
Gate-Source Threshold
Voltage
VGS(th)
Static Drain-Source
On-State Resistance (*)
RDS(on)
Forward
Transconductance(*)(†)
gfs
Input Capacitance
Typ.
Max.
Unit
Conditions
Static
V
ID= 250µA, VGS=0V
0.5
µA
VDS= 30V, VGS=0V
100
nA
VGS=±20V, VDS=0V
3.0
V
ID= 250µA, VDS=VGS
0.028
0.045
Ω
Ω
VGS= 10V, ID= 6.0A
VGS= 4.5V, ID= 4.9A
12
S
VDS= 15V, ID= 6.0A
Ciss
472
pF
Output Capacitance
Coss
178
pF
Reverse Transfer
Capacitance
Crss
65
pF
Turn-On-Delay Time
td(on)
2.5
ns
Rise Time
tr
3.1
ns
Turn-Off Delay Time
td(off)
14
ns
Fall Time
tf
9.7
ns
Total Gate Charge
Qg
10.5
nC
Gate-Source Charge
Qgs
1.86
nC
Gate Drain Charge
Qgd
2.3
nC
VSD
0.68
1.0
Dynamic (†)
VDS= 15V, VGS=0V
f=1MHz
Switching (‡)(†)
VDD= 15V, ID= 1A
RG ≅ 6.0Ω, VGS=10V
VDS= 15V, VGS= 10V
ID= 6A
Source-drain diode
Diode Forward Voltage(*)
1.2
V
Tj=25°C, IS= 1.7A,
VGS=0V
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤2%.
(†) For design aid only, not subject to production testing
(‡) Switching characteristics are independent of operating junction temperature.
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Typical characteristics
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Test circuits
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Package outline - SO8
DIM
Inches
Millimeters
Min.
Max.
Min.
Max.
DIM
Inches
Min.
Millimeters
Max.
0.050 BSC
Min.
Max.
A
0.053
0.069
1.35
1.75
e
A1
0.004
0.010
0.10
0.25
b
0.013
0.020
0.33
1.27 BSC
0.51
D
0.189
0.197
4.80
5.00
c
0.008
0.010
0.19
0.25
H
0.228
0.244
5.80
6.20
⍜
0°
8°
0°
8°
E
0.150
0.157
3.80
4.00
h
0.010
0.020
0.25
0.50
L
0.016
0.050
0.40
1.27
-
-
-
-
-
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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ZXMN3G32DN8
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
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The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
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tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.
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approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
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of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
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Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce
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All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.
Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2008 Published by Zetex Semiconductors plc
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