DIODES ZXMN6A25KTC

ZXMN6A25K
60V DPAK N-channel enhancement mode MOSFET
Summary
V(BR)DSS
RDS(on) (⍀)
ID (A)
0.050 @ VGS= 10V
10.7
0.070 @ VGS= 4.5V
9
60
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
D
•
Low on-resistance
•
Fast switching speed
•
Low gate drive
•
DPAK package
G
S
Applications
•
DC-DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
D
Ordering information
D
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
13
16
2,500
ZXMN6A25KTC
G
S
Pinout - top view
Device marking
ZXMN
6A25
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ZXMN6A25K
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGS
±20
V
ID
10.7
A
@ VGS= 10V; Tamb=70°C(b)
8.6
A
@ VGS= 10V; Tamb=25°C(a)
7
A
IDM
36
A
IS
11.8
A
Pulsed source current (body diode)(c)
ISM
36
A
Power dissipation at Tamb =25°C(a)
PD
4.25
W
34
mW/°C
9.85
W
78.7
mW/°C
2.11
W
16.8
mW/°C
Tj, Tstg
-55 to +150
°C
Symbol
Limit
Unit
Junction to ambient(a)
R⍜JA
29.4
°C/W
Junction to ambient(b)
R⍜JA
12.7
°C/W
Junction to ambient(d)
R⍜JA
59.1
°C/W
Continuous drain current @ VGS= 10V; Tamb=25°C(b)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Linear derating factor
PD
Power dissipation at Tamb =25°C(b)
Linear derating factor
PD
Power dissipation at Tamb =25°C(d)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300␮s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz. copper, in
still air conditions.
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ZXMN6A25K
Thermal characteristics
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ZXMN6A25K
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
V(BR)DSS
60
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown
voltage
V
ID= 250␮A, VGS=0V
Zero gate voltage drain current IDSS
1.0
␮A
VDS= 60V, VGS=0V
Gate-body leakage
IGSS
100
nA
VGS=±20V, VDS=0V
Gate-source threshold voltage
VGS(th)
3
V
ID= 250␮A, VDS=VGS
Static drain-source on-state
resistance (*)
RDS(on)
0.050
⍀
VGS= 10V, ID= 3.6A
0.070
⍀
VGS= 4.5V, ID = 3.0A
10.2
S
VDS= 15V, ID= 4.5A
VDS= 30V, VGS=0V
f=1MHz
1
Forward transconductance (*)(‡) gfs
Dynamic(‡)
Input capacitance
Ciss
1063
pF
Output capacitance
Coss
104
pF
Reverse transfer capacitance
Crss
64
pF
Turn-on-delay time
td(on)
3.8
ns
Rise time
tr
4.0
ns
Turn-off delay time
td(off)
26.2
ns
Fall time
tf
10.6
ns
Gate charge
Qg
11.0
nC
VDS= 30V, VGS= 5V
ID= 1.4A
Total gate charge
Qg
20.4
nC
Gate-source charge
Qgs
4.1
nC
VDS= 30V, VGS= 10V
ID= 1.4A
Gate drain charge
Qgd
5.1
nC
Diode forward voltage(*)
VSD
0.85
Reverse recovery time(‡)
trr
Reverse recovery charge(‡)
Qrr
Switching (†) (‡)
VDD= 30V, ID= 1A
RG≅6.0⍀, VGS= 10V
Source-drain diode
0.95
V
Tj=25°C, IS= 5.5A,
VGS=0V
22.0
ns
21.4
nC
Tj=25°C, IS= 2.2A,
di/dt=100A/␮s
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
(†) Switching characteristics are independent of operating junction temperature
(‡) For design aid only, not subject to production testing.
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ZXMN6A25K
Typical characteristics
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ZXMN6A25K
Typical characteristics
Current
regulator
QG
12V
VG
QGS
50k
Same as
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VCC
10%
VGS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
Issue 3 - Novmber 2006
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Switching time test circuit
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ZXMN6A25K
Package outline - DPAK
DIM
A
A1
b
b2
b3
c
c2
D
D1
E
E1
Inches
Min
Max
0.086
0.094
0.005
0.020
0.035
0.030
0.045
0.205
0.215
0.018
0.024
0.018
0.023
0.213
0.245
0.205
0.250
0.265
0.170
-
Millimeters
Min
Max
2.18
2.39
0.127
0.508
0.89
0.762
1.14
5.21
5.46
0.457
0.61
0.457
0.584
5.41
6.22
5.21
6.35
6.73
4.32
-
DIM
e
H
L
L1
L2
L3
L4
L5
θ1°
θ°
-
Inches
Min
Max
0.090 BSC
0.370
0.410
0.055
0.070
0.108 REF
0.020 BSC
0.035
0.065
0.025
0.040
0.045
0.060
0°
10°
0°
15°
-
Millimeters
Min
Max
2.29 BSC
9.40
10.41
1.40
1.78
2.74 REF
0.508 BSC
0.89
1.65
0.635
1.016
1.14
1.52
0°
10°
0°
15°
-
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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ZXMN6A25K
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a
representation relating to the products or services concerned.
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For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
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To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our
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Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
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Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce
the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.
Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2006 Published by Zetex Semiconductors plc
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