DIODES ZXMN6A25N8TA

ZXMN6A25N8
60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS
RDS(on) (Ω)
ID(A)
60
0.050 @ VGS=10V
7.0
0.070 @ VGS=4.5V
Description
This new generation Trench MOSFET from
Zetex features low on-resistance and fast switching,
making it ideal for high efficiency power management applications.
D
Features
•
•
•
•
Low on-resistance
Fast switching speed
Low gate drive
SO8 package
G
S
Applications
•
DC-DC Converters
•
Power management functions
S
D
•
Disconnect switches
S
D
•
Motor control
S
D
G
D
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
500
ZXMN6A25N8TA
Top view
Device marking
ZXMN6A25
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ZXMN6A25N8
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-Source voltage
VDSS
60
V
Gate-Source voltage
VGS
± 20
V
ID
5.7
A
Continuous Drain current @ VGS= 10V; TA=25°C
@ VGS= 10V; TA=70°C
@ VGS= 10V; TA=25°C
@ VGS= 10V; TL=25°C
Pulsed Drain current
(b)
(b)
Pulsed Source current (Body diode)
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TL =25°C
Linear derating factor
4.3
(a)(d)
(c)
Continuous Source current (Body diode)
4.5
(a)
(b)
(c)
(a)
(b)
(d)
Operating and storage temperature range
7.0
IDM
25.7
A
IS
4.1
A
ISM
25.7
A
PD
1.56
12.5
W
mW/°C
PD
2.8
22.2
W
mW/°C
PD
4.14
33.1
W
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Value
Unit
RθJA
80
°C/W
RθJA
45
°C/W
RθJL
30.2
°C/W
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Junction to lead
(a)
(b)
(d)
NOTES:
(a)
(b)
(c)
(d)
For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
Mounted on FR4 PCB measured at t ≤ 10 sec.
Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
Thermal resistance from junction to solder-point (at the end of the drain lead).
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ZXMN6A25N8
Thermal characteristics
1.6
Max Power Dissipation (W)
ID Drain Current (A)
RDS(on)
10 Limited
1
DC
100m
1s
100ms
10m
10ms
Single Pulse
Tamb=25°C
1m
100m
1ms
100µs
1
10
VDS Drain-Source Voltage (V)
1.4
25mm x 25mm
1oz FR4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
80
70
T amb=25°C
60
50
D=0.5
40
30
20
Single Pulse
D=0.2
D=0.05
10
0
100µ
D=0.1
1m
10m 100m
1
Pulse Width (s)
10
100
1k
© Zetex Semiconductors plc 2008
80
100 120 140 160
Single Pulse
T amb=25°C
100
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Issue 1 - April 2008
60
Temperature (°C)
Derating Curve
Maximum Power (W)
Thermal Resistance (°C/W)
Safe Operating Area
40
Pulse Power Dissipation
3
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ZXMN6A25N8
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Symbol
Min.
Drain-Source breakdown
voltage
V(BR)DSS
60
Zero gate voltage drain
current
IDSS
Gate-Body leakage
IGSS
Gate-Source threshold
voltage
VGS(th)
Static Drain-Source
( )
on-state resistance *
RDS(on)
Forward
( ) (†)
Transconductance *
gfs
Input capacitance
Typ.
Max.
Unit
Conditions
V
ID =250μA, VGS=0V
1.0
µA
VDS=60V, VGS=0V
100
nA
VGS=±20V, VDS=0V
3
V
ID=250μA, VDS=VGS
0.050
0.070
Ω
VGS= 10V, ID= 3.6A
VGS= 4.5V, ID= 3.0A
10.2
S
VDS= 15V, ID= 4.5A
Ciss
1063
pF
Output capacitance
Coss
104
pF
Reverse transfer
capacitance
Crss
64
pF
Turn-on-delay time
td(on)
3.8
ns
Rise time
tr
4.0
ns
VDD= 30V, VGS= 10V
Turn-off delay time
td(off)
26.2
ns
Fall time
tf
10.6
ns
ID= 1A
RG ≅ 6.0Ω,
Gate charge
Qg
11.0
nC
Total gate charge
Qg
20.4
nC
Gate-Source charge
Qgs
4.1
nC
Gate-Drain charge
Qgd
5.1
nC
VSD
0.85
trr
22.0
ns
Qrr
21.4
nC
Dynamic
1
(†)
Switching
VDS= 30V, VGS=0V
f=1MHz
(‡) (†)
VDS= 30V, VGS= 5V
ID= 4.5A
VDS= 30V, VGS= 10V
ID= 4.5A
Source–Drain diode
Diode forward voltage
Reverse recovery time
( )
*
(‡)
Reverse recovery charge
(‡)
0.95
V
IS= 5.5A,VGS=0V
IS= 2.2A,di/dt=100A/μs
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
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ZXMN6A25N8
Typical characteristics
10V
T = 150°C
4.5V
4V
ID Drain Current (A)
ID Drain Current (A)
T = 25°C
10
3.5V
1
3V
0.1
VGS
2.5V
0.01
0.1
1
4.5V
10V
10
4V
3.5V
3V
1
2.5V
0.1
VGS
2V
0.01
10
0.1
VDS Drain-Source Voltage (V)
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.4
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
10
T = 150°C
1
T = 25°C
0.1
VDS = 10V
0.01
2
3
4
VGS Gate-Source Voltage (V)
5
1000
T = 25°C
VGS
3V
3.5V
10
4V
4.5V
1
10V
0.1
0.01
RDS(on)
1.0
0.8
VGS(th)
VGS = VDS
0.6
0.4
-50
ID = 250uA
0
50
100
Tj Junction Temperature (°C)
150
100
2.5V
100
0.01
ID = 4.5A
Normalised Curves v Temperature
ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
Typical Transfer Characteristics
VGS = 10V
1.2
0.1
1
ID Drain Current (A)
© Zetex Semiconductors plc 2008
T = 25°C
1
0.1
0.01
0.2
10
On-Resistance v Drain Current
Issue 1 - April 2008
T = 150°C
10
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
5
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ZXMN6A25N8
Typical characteristics
1600
10
C Capacitance (pF)
1400
VGS Gate-Source Voltage (V)
VGS = 0V
f = 1MHz
1200
1000
CISS
800
COSS
600
CRSS
400
200
0
0.1
1
10
VDS - Drain - Source Voltage (V)
ID = 4.5A
8
6
4
2
VDS = 30V
0
0
5
10
15
20
25
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Test circuits
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ZXMN6A25N8
Package outline SO8
SO8 Package Information
DIM
Inches
Millimeters
DIM
Inches
Min.
Millimeters
Min.
Max.
Min.
Max.
Max.
A
0.053
0.069
1.35
1.75
e
A1
0.004
0.010
0.10
0.25
b
0.013
0.020
0.33
0.51
D
0.189
0.197
4.80
5.00
c
0.008
0.010
0.19
0.25
H
0.228
0.244
5.80
6.20
U
0°
8°
0°
8°
E
0.150
0.157
3.80
4.00
h
0.010
0.020
0.25
0.50
L
0.016
0.050
0.40
1.27
-
-
-
-
-
0.050 BSC
Min.
Max.
1.27 BSC
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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ZXMN6A25N8
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.
Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the
user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex
with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or
otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach
of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these
circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A.
Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
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To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally
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possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
being affected should be replaced.
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Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory
requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of
hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and
ELV directives.
Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2008 Published by Zetex Semiconductors plc
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