DIODES ZXT790AKTC

ZXT790AK
40V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK
SUMMARY
BVCEO = -40V : RSAT = 83m ; IC = -3A
DESCRIPTION
Packaged in the D-Pak outline this high gain 40V PNP transistor offers low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
FEATURES
DPAK
• 3 Amps continuous current
• Up to 6 Amps peak current
• Low saturation voltages
• High gain
APPLICATIONS
• DC - DC Converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Siren drivers
ORDERING INFORMATION
DEVICE
ZXT790AKTC
PINOUT
REEL
SIZE
TAPE WIDTH
QUANTITY PER REEL
13"
16mm embossed
2500 units
DEVICE MARKING
• ZXT790A
ISSUE 1 - JUNE 2003
1
SEMICONDUCTORS
ZXT790AK
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
V
Collector-Base Voltage
BV CBO
-50
Collector-Emitter Voltage
BV CEO
-40
V
Emitter-Base Voltage
BV EBO
-5
V
Continuous Collector Current
IC
-3
A
Peak Pulse Current
I CM
Base Current
IB
Power Dissipation at TA =25°C (a)
PD
Linear Derating Factor
Thermal Resistance Junction to Ambient
Power Dissipation at TA =25°C (b)
PD
Linear Derating Factor
Thermal Resistance Junction to Ambient
Power Dissipation at TA =25°C (c)
PD
Linear Derating Factor
Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
T j , T stg
-6
A
-0.5
A
2.1
W
16.8
mW/°C
59
°C/W
3.0
W
24.4
mW/°C
41
°C/W
3.9
W
30.9
mW/°C
32
°C/W
-55 to 150
°C
NOTES
(a)
For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
(b)
For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 1oz copper in still
air conditions.
(c)
For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper in still
air conditions.
ISSUE 1 - JUNE 2003
SEMICONDUCTORS
2
ZXT790AK
CHARACTERISTICS
ISSUE 1 - JUNE 2003
3
SEMICONDUCTORS
ZXT790AK
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown Voltage
BV CBO
-50
-70
MAX. UNIT CONDITIONS
V
I C = -100␮A
Collector-Emitter Breakdown Voltage
BV CEO
-40
-60
V
I C = -10mA (1)
-5
-8.3
Emitter-Base Breakdown Voltage
BV EBO
V
I E = -100␮A
Collector Cut-Off Current
I CBO
<1
-20
nA
V CB = -30V
Collector Cut-Off Current
I CE S
<1
-20
nA
V CB = -30V
Emitter Cut-Off Current
I EBO
<1
-20
nA
V EB = -4V
Collector-Emitter Saturation Voltage
V CE(SAT)
-110
-170
mV
I C = -0.5A, I B = -5mA (1)
-220
-350
mV
I C = -1A, I B = -10mA (1)
-260
-450
mV
I C = -2A, I B = -50mA (1)
-250
-450
mV
I C = -3A, I B = -300mA (1)
Base-Emitter Saturation Voltage
V BE(SAT)
-1.05
-1.15
V
IC = -3A, IB = -300mA (1)
Base-Emitter Turn-On Voltage
V BE(ON)
-0.9
-1.0
V
I C = -3A, VCE = -2V (1)
Static Forward Current Transfer Ratio
h FE
300
450
800
250
390
IC = -500mA, VCE = -2V(1)
200
350
I C = -1A, V CE = -2V (1)
150
280
I C = -2A, V CE = -2V (1)
80
170
I C = -3A, V CE = -2V (1)
MHz I C = -50mA, V CE = -5V
Transition Frequency
fT
100
IC = -10mA, VCE = -2V (1)
f = 50MHz
Output Capacitance
Switching Times
VCB = -10V, f = 1MHz (1)
24
pF
t ON
35
ns
IC = -500mA, VCC = -10V,
t OFF
600
ns
I B1 = I B2 = -50mA
C OBO
NOTES
(1)
Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
ISSUE 1 - JUNE 2003
SEMICONDUCTORS
4
ZXT790AK
TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2003
5
SEMICONDUCTORS
ZXT790AK
PACKAGE OUTLINE
DIM
MILLIMETRES
MIN
C o n tr o l l i ng di m e ns i ons a re i n m i l l i m e t r e s.
Approximate conversions are given in inches
INCHES
MAX
MIN
MAX
A
2.18
2.38
0.086
0.094
A1
ᎏ
0.127
ᎏ
0.005
b
0.635
0.89
0.025
0.035
b2
0.762
1.114
0.030
0.045
b3
5.20
5.46
0.205
0.215
c
0.457
0.609
0.018
0.024
c2
0.457
0.584
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
5.20
ᎏ
0.205
ᎏ
E
6.35
6.73
0.250
0.265
E1
4.32
ᎏ
0.170
ᎏ
e
2.30 BSC
0.090 BSC
H
9.40
10.41
0.370
0.410
L
1.40
1.78
0.055
0.070
L1
2.74 REF
0.108 REF
L2
0.051 BSC
0.020 BSC
L3
0.89
1.27
0.035
0.050
L4
0.635
1.01
0.025
0.040
L5
1.14
1.52
0.045
0.060
⍜1⬚
0ⴗ
10ⴗ
0ⴗ
10ⴗ
⍜⬚
0ⴗ
15ⴗ
0ⴗ
15ⴗ
© Zetex plc 2003
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ISSUE 1 - JUNE 2003
SEMICONDUCTORS
6