DIODES ZXTN25040DFLTA

ZXTN25040DFL
40V, SOT23, NPN low power transistor
Summary
BVCEX > 130V
BVCEO > 40V
BVECO > 6V
IC(cont) = 1.5A
VCE(sat) < 85mV @ 1A
RCE(sat) = 59m⍀
PD = 350mW
Complementary part number ZXTP25040DFL
Description
C
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
B
Features
•
High peak current
•
Low saturation voltage
•
130V forward blocking voltage
•
6V reverse blocking voltage
E
Applications
E
•
MOSFET and IGBT gate driving
•
DC-DC conversion
•
LED driving
•
Interface between low voltage IC's and loads
C
B
Pinout - top view
Ordering information
Device
ZXTN25040DFLTA
Reel size
(inches)
Tape width
(mm)
Quantity per reel
7
8
3000
Device marking
1B7
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ZXTN25040DFL
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
130
V
Collector-emitter voltage (forward blocking)
VCEX
130
V
Collector-emitter voltage
VCEO
40
V
Emitter-collector voltage (reverse blocking)
VECO
6
V
Emitter-base voltage
VEBO
7
V
Continuous collector current(a)
IC
1.5
A
Base current
IB
0.5
A
Peak pulse current
ICM
6
A
Power dissipation at Tamb = 25°C(a)
PD
350
mW
2.8
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Limit
Unit
R⍜JA
357
°C/W
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Junction to ambient(a)
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
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ZXTN25040DFL
Characteristics
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ZXTN25040DFL
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter
breakdown voltage (forward
blocking)
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Symbol
BVCBO
Min.
130
Typ.
170
Max.
Unit Conditions
V
IC = 100␮A
BVCEX
130
170
V
IC = 100␮A; RBE < 1k⍀ or
-1V < VBE < 0.25V
BVCEO
40
63
V
IC = 10mA (*)
BVEBO
7
8.3
V
IE = 100␮A
BVECX
6
7.4
V
IE = 100␮A, RBC < 1k⍀ or
0.25V > VBC > -0.25V
Emitter-collector breakdown BVECO
voltage (base open)
Collector cut-off current
ICBO
6
7.4
V
IE = 100␮A,
<1
50
20
nA
␮A
VCB = 100V
VCB = 100V, Tamb= 100°C
ICEX
<1
100
nA
VCE = 100V; RBE < 1k⍀ or
-1V < VBE < 0.25V
Emitter cut-off current
IEBO
<1
50
nA
VEB = 5.6V
Collector-emitter saturation
voltage
VCE(sat)
35
50
mV
IC = 0.5A, IB = 50mA(*)
60
80
mV
IC = 0.5A, IB = 10mA(*)
70
85
mV
IC = 1A, IB = 100mA
145
185
mV
IC = 1.5A, IB = 30mA(*)
235
285
mV
IC = 4A, IB = 400mA(*)
VBE(sat)
840
950
mV
IC = 1.5A, IB = 30mA(*)
VBE(on)
770
850
mV
IC = 1.5A, VCE = 2V(*)
300
450
900
300
400
IC = 1A, VCE = 2V(*)
170
250
IC = 1.5A, VCE = 2V(*)
25
40
IC = 4A, VCE = 2V(*)
Collector emitter cut-off
current
Base-emitter saturation
voltage
Base-emitter turn-on
voltage
Static forward current
transfer ratio
hFE
Transition frequency
fT
190
Output capacitance
Cobo
11.7
Delay time
t(d)
Rise time
IC = 10mA, VCE = 2V(*)
MHz IC = 50mA, VCE = 10V
f = 100MHz
20
pF
VCB = 10V, f = 1MHz(*)
64
ns
t(r)
108
ns
Storage time
t(s)
428
ns
VCC = 10V,
IC = 1A,
IB1 = IB2= 10mA.
Fall time
t(f)
130
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
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ZXTN25040DFL
Typical characteristics
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ZXTN25040DFL
Package outline - SOT23
E
e
e1
b
3 leads
L1
D
E1
A
A1
Dim.
L
c
Millimeters
Inches
Dim.
Millimeters
Min.
Max.
Min.
Max.
A
-
1.12
-
0.044
e1
A1
0.01
0.10
0.0004
0.004
E
2.10
2.64
0.083
0.104
b
0.30
0.50
0.012
0.020
E1
1.20
1.40
0.047
0.055
c
0.085
0.20
0.003
0.008
L
0.25
0.60
0.0098
0.0236
D
2.80
3.04
0.110
0.120
L1
0.45
0.62
0.018
0.024
-
-
-
-
-
e
0.95 NOM
Min.
0.037 NOM
Max.
Inches
1.90 NOM
Min.
Max.
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTN25040DFL
Intentionally left blank
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ZXTN25040DFL
Definitions
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or
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Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
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