FDFMA3P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode –30 V, –3.3 A, 87 mΩ Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with very low on-state resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses. Max rDS(on) = 87 mΩ at VGS = –10 V, ID = –3.3 A Max rDS(on) = 152 mΩ at VGS = –4.5 V, ID = –2.3 A HBM ESD protection level > 2 KV typical (Note 3) The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Schottky VF < 0.37 V @ 500 mA Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant PIN 1 A NC C C Top D A 1 6 C NC 2 5 G D 3 4 S D G S Bottom MicroFET 2x2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed Units V ±25 V –3.3 -15 Power Dissipation PD Ratings –30 TJ, TSTG Operating and Storage Junction Temperature Range VRRM Schottky Repetitive Peak Reverse Voltage IO Schottky Average Forward Current (Note 1a) 1.4 (Note 1b) 0.7 A W –55 to +150 °C 20 V 2 A Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 86 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 173 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 86 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 173 °C/W Package Marking and Ordering Information Device Marking 3P2 Device FDFMA3P029Z ©2013 Fairchild Semiconductor Corporation FDFMA3P029Z Rev.C Package MicroFET 2X2 1 Reel Size 7” Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDFMA3P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode January 2013 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = –250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 μA IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V ±10 μA –3 V –30 V –22 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250 μA, referenced to 25 °C VGS = –10 V, ID = –3.3 A 69 87 Static Drain to Source On-Resistance VGS = –4.5 V, ID = –2.3 A 108 152 VGS = –10 V, ID = –3.3 A, TJ =125 °C 97 122 rDS(on) gFS Forward Transconductance Rg Gate Resistance –1 –1.9 5 VDS = –5 V, ID = –3.3 A mV/°C mΩ 6 S 12 Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = –15 V, VGS = 0 V, f = 1 MHz 324 435 pF 59 80 pF 53 80 pF 5.2 11 ns 3 10 ns 17 31 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = –15 V, ID = –3.3 A VGS = –10 V, RGEN = 6 Ω Total Gate Charge VGS = 0 V to –10 V Total Gate Charge VGS = 0 V to –5 V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = –15 V, ID = –3.3 A 11 25 ns 7.2 10 nC 4.1 6 1.0 nC 1.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = –3.3 A (Note 2) IF = –3.3 A, di/dt = 100 A/μs –0.94 –1.3 V 20 32 ns 10 18 nC 300 μA mA Schottky Diode Characteristics VR IR Reverse Voltage Reverse Leakage IR = 1 mA VR = 20 V IF = 500 mA VF Forward Voltage IF = 1 A ©2013 Fairchild Semiconductor Corporation FDFMA3P029Z Rev.C 2 TJ = 25 °C TJ = 25 °C 20 V 30 TJ = 125 °C 10 45 TJ = 25 °C 0.32 0.37 TJ = 125 °C 0.21 0.26 TJ = 25 °C 0.37 0.435 TJ = 125 °C 0.28 0.33 V www.fairchildsemi.com FDFMA3P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25 °C unless otherwise noted (b) MOSFET RθJA = 173 °C/W when mounted on a minimum pad of 2 oz copper (c) Schottky RθJA = 86 oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. (d) Schottky RθJA = 173 oC/W when mounted on a minimum pad of 2 oz copper. a)86 oC/W when mounted on a 1in2 pad of 2 oz copper. b)173 oC/W when mounted on a minimum pad of 2 oz copper. c)86 oC/W when mounted on a 1in2 pad of 2 oz copper. d)173 oC/W when mounted on a minimum pad of 2 oz copper. 2: Pulse Test : Pulse Width < 300 μs, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. ©2013 Fairchild Semiconductor Corporation FDFMA3P029Z Rev.C 3 www.fairchildsemi.com FDFMA3P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Notes: 1: RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJCis guaranteed by design while RθJA is determined by the user's board design. (a) MOSFET RθJA = 86 °C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB 15 -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 5 VGS = -5 V VGS = -10 V 12 VGS = -4.5 V 9 VGS = -4 V 6 VGS = -3.5 V 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 5 VGS = -3.5 V 4 VGS = -4 V 3 VGS = -4.5 V 2 VGS = -5 V 1 0 0 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.2 1.1 1.0 0.9 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.3 15 300 200 TJ = 125 oC 100 TJ = 25 oC -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage -IS, REVERSE DRAIN CURRENT (A) 15 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 12 VDS = -5 V 9 6 TJ = PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = -3.3 A 0 -50 Figure 3. Normalized On- Resistance vs Junction Temperature -ID, DRAIN CURRENT (A) 12 400 ID = -3.3 A VGS = -10 V 1.4 3 9 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0.7 -75 6 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 1.5 VGS = -10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 150 oC TJ = 25 oC 20 10 VGS = 0 V TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 TJ = -55 oC 0 1 2 3 4 5 0.001 0.0 6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2013 Fairchild Semiconductor Corporation FDFMA3P029Z Rev.C 4 1.6 www.fairchildsemi.com FDFMA3P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25 °C unless otherwise noted 1000 VDD = -15 V ID = -3.3 A Ciss 8 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = -20 V VDD = -10 V 6 4 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 0 0 2 4 6 10 0.1 8 Figure 7. Gate Charge Characteristics -1 10 10 -ID, DRAIN CURRENT (A) -Ig, GATE LEAKAGE CURRENT (A) 30 20 VDS = 0 V -2 -3 10 -4 10 -5 10 TJ = 125 oC -6 10 -7 10 TJ = 25 oC 1 1 ms THIS AREA IS LIMITED BY rDS(on) 10 -9 0 4 8 12 16 20 24 28 0.01 0.1 32 10 TJ = 125 oC 1 TJ = 85 oC TJ = 25 oC 0.001 0 200 400 600 VF, FORWARD VOLTAGE (mV) 800 Figure 11. Schottky Diode Forward Voltage ©2013 Fairchild Semiconductor Corporation FDFMA3P029Z Rev.C RθJA = 173 oC/W 1s 10 s TA = 25 oC DC 1 10 100 Figure 10. Forward Bias Safe Operating Area IR, REVERSE LEAKAGE CURRENT (mA) Figure 9. Gate Leakage Current vs Gate to Source Voltage 0.01 100 ms -VDS, DRAIN to SOURCE VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) 0.1 10 ms SINGLE PULSE TJ = MAX RATED 0.1 -8 10 10 Figure 8. Capacitance vs Drain to Source Voltage 10 IF, FORWARD CURRENT (A) 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100 TJ = 125 oC 10 1 TJ = 85 oC 0.1 0.01 TJ = 25 oC 0.001 0 5 10 15 20 25 VR, REVERSE VOLTAGE (V) 30 Figure 12. Schottky Diode Reverse Current 5 www.fairchildsemi.com FDFMA3P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25 °C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 30 10 SINGLE PULSE 1 o RθJA = 173 C/W o TA = 25 C 0.5 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 173 C/W 0.02 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2013 Fairchild Semiconductor Corporation FDFMA3P029Z Rev.C 6 www.fairchildsemi.com FDFMA3P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25 °C unless otherwise noted FDFMA3P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Dimensional Outline and Pad Layout ©2013 Fairchild Semiconductor Corporation FDFMA3P029Z Rev.C 7 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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