DIODES ZXTP2025FTA

ZXTP2025F
50V, SOT23, PNP medium power transistor
Summary
V(BR)CEO > -50V
IC(cont) = -5A
RCE(sat) = 30m⍀ typical
VCE(sat) < - 60mV @ -1A
PD = 1.2W
Complementary part number: ZXTN2031F
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally suited
to applications where space is at a premium.
Features
•
Higher power dissipation SOT23 package
•
High peak current
•
Low saturation voltage
•
High gain
•
50V forward blocking voltage
Applications
•
MOSFET and IGBT gate driving
•
Motor drive
•
Relay, lamp and solenoid drive
•
High side switches
•
DC-DC converters
Pinout - top view
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity per reel
7
8
3,000
ZXTP2025FTA
Device marking
312
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ZXTP2025F
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-7.0
V
Peak pulse current
ICM
-10
A
Continuous collector current (c)
IC
-5
A
Base current
IB
-1.2
A
Power dissipation @ TA=25°C (a)
Linear derating factor
PD
1.0
W
8.0
mW/°C
Power dissipation @ TA=25°C (b)
Linear derating factor
PD
Power dissipation @ TA=25°C (c)
Linear derating factor
PD
Operating and storage temperature
Tj:Tstg
1.2
W
9.6
mW/°C
1.56
W
12.5
mW/°C
-55 to +150
°C
Thermal resistance
Parameter
Symbol
Value
Unit
Junction to ambient (a)
RθJA
125
°C/W
Junction to ambient (b)
RθJA
104
°C/W
Junction to ambient (c)
RθJA
80
°C/W
NOTES:
(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(c) As (b) above measured at t<5secs.
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ZXTP2025F
Characteristics
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ZXTP2025F
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown
voltage
V(BR)CBO
-50
Collector-emitter breakdown
voltage
V(BR)CEO
Emitter-base breakdown
voltage
V(BR)EBO
Collector-emitter cut-off
current
ICEV
Collector-base cut-off current
Unit
Conditions
100
V
IC=-100µA
-50
70
V
IC=-10mA (a)
-7.0
8.5
V
IE=-100µA
-20
nA
VCE=-40V,
VBE = 1V
ICBO
-20
nA
VCB=-40V
Emitter-base cut-off current
IEBO
-10
nA
VEB=-6V
Static forward current transfer
ratio
HFE
Collector-emitter saturation
voltage
Max.
180
380
200
350
70
120
Ic=-5A, VCE=-2V(a)
12
30
Ic=-10A, VCE=-2V(a)
VCE(sat)
IC=-10mA, VCE=-2V(a)
IC=-500mA, VCE=-2V(a)
560
-11
-20
mV
IC=-100mA, IB=-10mA(a)
-40
-60
mV
IC=-1A, IB=-100mA(a)
-150
-230
mV
IC=-2A, IB=-40mA(a)
-150
-200
mV
IC=-5A, IB=-500mA(a)
-0.81
-0.88
V
IC=-2A, IB=-40mA(a)
-0.95
-1.05
V
IC=-5A, IB=-500mA(a)
-0.82
-0.92
V
IC=-5A, VCE=-2V(a)
Base-emitter saturation
voltage
VBE(sat)
Base-emitter turn-on voltage
VBE(on)
Transition frequency
fT
190
MHz
Output capacitance
Cobo
42
pF
Delay time
t(d)
14
ns
Rise time
t(r)
23
ns
VCC=-12V, IC=-2.5A,
Storage time
t(stg)
240
ns
IB1=IB2=-125mA
Fall time
t(f)
30
ns
Ic=-500mA, VCE=-10V,
f=50MHz
VCB=-10V, f=1MHz
NOTES:
(a) Measured under pulsed conditions. Pulse width=300␮S. Duty cycle ⱕ2%.
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ZXTP2025F
Typical characteristics
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ZXTP2025F
Packaging details - SOT23
L
H
N
G
D
3 leads
M
A
B
C
K
Dim.
F
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
C
-
1.10
D
0.37
F
0.085
G
Dim.
Millimeters
Inches
Min.
Max.
Max.
Max.
H
0.33
0.51
0.013
0.020
0.055
K
0.01
0.10
0.0004
0.004
-
0.043
L
2.10
2.50
0.083
0.0985
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
0.15
0.0034
0.0059
N
0.95 NOM
-
-
1.90 NOM
0.075 NOM
0.0375 NOM
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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